SP8K5FU6TB

Overview

The SP8K5FU6TB is a dual N-channel power MOSFET manufactured by ROHM Semiconductor, housed in an HSOP-8 surface-mount package. It features a drain-source voltage (V_DSS) of 100V and a continuous drain current (I_D) of 3.0A per channel. The typical on-resistance (R_DS(on)) is 0.135Ω at a gate-source voltage (V_GS) of 4V and 0.13Ω at 4.5V. The device has a total gate charge (Q_g) of approximately 7.2nC and a power dissipation rating of 2.0W. It operates within a storage temperature range of -55°C to 150°C.

Feature Summary

• Dual N-channel configuration for bridge or synchronous rectifier applications
• Low on-resistance optimized for 4V to 4.5V drive voltages
• Compact HSOP-8 surface mount package design

Applications

• DC-DC converter circuits
• Motor driver stages
• Power supply switching modules

Procurement Notes

Verify the specific suffix FU6TB against official ROHM documentation to confirm tape-and-reel quantity and RoHS compliance status. Ensure the component matches the required 100V rating and 3.0A current capacity for the target circuit design before procurement.

Selection Notes

Select this component when a 100V dual N-channel MOSFET with low R_DS(on) at 4V drive is required. Compare Q_g and thermal resistance against alternatives if high-frequency switching efficiency or heat dissipation in confined spaces is critical for the application.

Part Context

This part belongs to ROHM's series of dual MOSFETs designed for compact power management solutions. It serves as a complement to single-channel devices, offering space savings in designs requiring two matched switches, such as half-bridge configurations.

Replacement Considerations

SP8K52HZG is a similar active alternative with the same pinout and package.