SP8M24HZGTB

Overview

The SP8M24HZGTB is a complementary power MOSFET manufactured by ROHM Semiconductor, designed for switching power supply applications. It integrates one N-channel and one P-channel enhancement-mode transistor in an SOP-8 surface-mount package. The device features a drain-source voltage (Vdss) of 45 V and a continuous drain current (Id) of 4.5 A. At a gate-source voltage (Vgs) of 4 V, the typical on-resistance (Rds(on)) is 0.046 Ω. The total gate charge (Qg) is 6.8 nC, with a maximum power dissipation (Pd) of 2 W. Operating temperatures range from -55°C to 150°C.

Feature Summary

• Complementary N-channel and P-channel configuration for efficient half-bridge driving
• Optimized for low drive voltage operation at 4 V
• Surface-mount SOP-8 package suitable for automated assembly

Applications

• Switching power supplies
• DC-DC converter circuits
• Motor driver interfaces

Procurement Notes

Verify the specific suffix 'HZGTB' against the official ROHM datasheet to confirm tape-and-reel packaging and automotive-grade qualification status. Ensure the component matches the required SOP-8 pinout and thermal characteristics for the target design.

Selection Notes

Select this component when a compact complementary pair is needed for 45 V applications. Compare Rds(on) values at 4 V and 4.5 V against alternative packages. Verify that the 2 W power dissipation rating meets the thermal requirements of the final enclosure.

Part Context

This part belongs to the SP8M24 series of complementary MOSFETs from ROHM. The series offers various packages including SOP-8 and smaller footprints. The HZGTB designation indicates a specific taping quantity and automotive-grade variant within the broader product line.

Replacement Considerations

The SP8M24HZG is listed as a similar level replacement with the same pinout and package. Verify if the non-TB suffix meets the specific automotive or taping requirements of the original design.