SP8M3FU6TB

SP8M3FU6TB

$1.00
  • Description:MOSFET N/P-CH 30V 5A/4.5A 8SOP
  • Series:-

SKU:245ceff4fecf Category: Brand:

  
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Product Detailed Parameters

  • Description:MOSFET N/P-CH 30V 5A/4.5A 8SOP
  • Series:-
  • Mfr:Rohm Semiconductor
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:N and P-Channel
  • FET Feature:Logic Level Gate
  • Drain to Source Voltage (Vdss):30V
  • Current - Continuous Drain (Id) @ 25°C:5A, 4.5A
  • Rds On (Max) @ Id, Vgs:51mOhm @ 5A, 10V
  • Vgs(th) (Max) @ Id:2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs:5.5nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds:230pF @ 10V
  • Power - Max:2W
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package:8-SOP
  • Grade:-
  • Qualification:-

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SP8M3FU6TB

Overview

The SP8M3FU6TB is a dual MOSFET array from ROHM Semiconductor, integrating one N-channel and one P-channel enhancement-mode transistor in an 8-SOP surface-mount package. It features a drain-source voltage (Vds) of 30V, with continuous drain currents of 5A for the N-channel and 4.5A for the P-channel. The device exhibits low on-resistance values of 25mΩ and 30mΩ respectively, supporting efficient power switching. With a maximum power dissipation of 2W and an operating temperature range up to +150°C, it is designed for compact high-speed applications.

Feature Summary

  • Integrates complementary N-channel and P-channel MOSFETs in a single compact package
  • Optimized for high-speed switching with low gate charge characteristics
  • Designed for reliable operation in automotive-grade environments

Applications

  • Automotive electronic control units
  • General-purpose power switching circuits
  • Motor driver interfaces

Procurement Notes

Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm RoHS compliance status and specific packaging options such as tape and reel quantities. Ensure the source provides valid traceability documentation for quality assurance purposes prior to procurement.

Selection Notes

Select this component for designs requiring integrated complementary switching in limited space. Consider the 30V rating and current capabilities against load requirements. Evaluate thermal management needs given the 2W power dissipation limit in the 8-SOP package. Verify compatibility with logic-level drive voltages for optimal performance.

Part Context

This part belongs to ROHM's SP8M series of dual MOSFET arrays, which are engineered for automotive and industrial applications. The series emphasizes reliability and miniaturization, offering integrated solutions that reduce board space compared to discrete components. These devices typically meet stringent automotive qualification standards.

Replacement Considerations

The SH8MA2GZETB is listed as a similar available substitute. Verify pinout compatibility and electrical specifications before substitution.

SP8M3FU6TBSP8M3FU6TB
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