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The SP8M3FU6TB is a dual MOSFET array from ROHM Semiconductor, integrating one N-channel and one P-channel enhancement-mode transistor in an 8-SOP surface-mount package. It features a drain-source voltage (Vds) of 30V, with continuous drain currents of 5A for the N-channel and 4.5A for the P-channel. The device exhibits low on-resistance values of 25mΩ and 30mΩ respectively, supporting efficient power switching. With a maximum power dissipation of 2W and an operating temperature range up to +150°C, it is designed for compact high-speed applications.
Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm RoHS compliance status and specific packaging options such as tape and reel quantities. Ensure the source provides valid traceability documentation for quality assurance purposes prior to procurement.
Select this component for designs requiring integrated complementary switching in limited space. Consider the 30V rating and current capabilities against load requirements. Evaluate thermal management needs given the 2W power dissipation limit in the 8-SOP package. Verify compatibility with logic-level drive voltages for optimal performance.
This part belongs to ROHM's SP8M series of dual MOSFET arrays, which are engineered for automotive and industrial applications. The series emphasizes reliability and miniaturization, offering integrated solutions that reduce board space compared to discrete components. These devices typically meet stringent automotive qualification standards.
The SH8MA2GZETB is listed as a similar available substitute. Verify pinout compatibility and electrical specifications before substitution.