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Product Detailed Parameters
- Description：MOSFET N/P-CH 80V 3.4A 8SOP
- Series：-
- Mfr：Rohm Semiconductor
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：N and P-Channel
- FET Feature：-
- Drain to Source Voltage (Vdss)：80V
- Current - Continuous Drain (Id) @ 25°C：3.4A (Ta), 2.6A (Ta)
- Rds On (Max) @ Id, Vgs：130mOhm @ 3.4A, 10V, 240mOhm @ 2.6A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：9.2nC @ 5V, 11.5nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds：600pF @ 10V, 1000pF @ 10V
- Power - Max：2W (Ta)
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SOP
- Grade：Automotive
- Qualification：AEC-Q101
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Overview
The SP8M41HZGTB is a complementary power MOSFET manufactured by ROHM Semiconductor, housed in an SOP-8 surface-mount package. It integrates N-channel and P-channel devices with built-in ESD protection diodes within a single unit. The component is AEC-Q101 qualified for automotive applications. Key electrical parameters include a drain-source voltage (V_DSS) of 30V and a continuous drain current (I_D) of 9A. Typical on-resistance (R_DS(on)) values are 0.017Ω at V_GS=4V, 0.016Ω at V_GS=4.5V, and 0.012Ω at V_GS=10V. Total gate charge (Q_G) is typically 15nC, with power dissipation rated at 2W.
Feature Summary
- Automotive-grade reliability certified under AEC-Q101 standards
- Integrated complementary N+P MOSFET structure with ESD protection
- Low on-resistance optimized for low-voltage drive conditions
Applications
- Automotive switching circuits
- Low-voltage power management systems
- General-purpose electronic switching applications
Procurement Notes
Verify the specific ordering suffix against official ROHM documentation to confirm tape-and-reel packaging specifications. Ensure the part number matches the exact pinout and thermal characteristics required for the target PCB layout. Cross-reference the latest datasheet revision to confirm compliance with current RoHS directives and material declarations before finalizing procurement orders.
Selection Notes
Select this component when a compact solution for complementary switching is required in automotive or industrial environments. The 30V rating suits low-voltage DC-DC converters and motor drivers. Verify that the 4V drive capability aligns with the system's logic levels to minimize switching losses. Consider the SOP-8 thermal performance for the expected power dissipation in the specific application context.
Part Context
This device belongs to ROHM's series of complementary MOSFETs designed for space-constrained designs. It serves as a direct replacement for the SP8M10FRA in existing designs, maintaining the same pinout and package dimensions while offering updated performance metrics. The integration simplifies bill-of-materials and assembly processes compared to discrete N and P-channel implementations.
Replacement Considerations
The SP8M10FRA is a confirmed substitute with identical pinout and package. Verify that the lower drain current rating of the SP8M10FRA (7.0A vs 9.0A) meets the application requirements. Both parts share the same SOP-8 footprint and thermal characteristics.
