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SPB100N03S203T is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 30V 100A TO263-3. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for SPB100N03S203T
- Description：MOSFET N-CH 30V 100A TO263-3
- Series：OptiMOS™
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：3mOhm @ 80A, 10V
- Vgs(th) (Max) @ Id：4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：150 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：7020 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：300W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：PG-TO263-3-2
- Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Single FETs, MOSFETs datasheet and documents for SPB100N03S203T
Single FETs, MOSFETs Overview
The SPB100N03S2-03 is an OptiMOS Power-Transistor featuring a P-TO263-3 package. It provides a maximum drain-source voltage of 30 V and a continuous drain current of 100 A at 25°C case temperature. The device exhibits a maximum on-state resistance of 3 mΩ at VGS=10V and ID=80A. It supports a pulsed drain current of 400 A, with a single-pulse avalanche energy rating of 810 mJ. The component operates within a junction temperature range of -55°C to +175°C.
Single FETs, MOSFETs Feature Summary
- Enhancement mode N-channel configuration
- Optimized gate charge and on-resistance product
- Superior thermal resistance characteristics
- Rated for avalanche and dv/dt stress
Single FETs, MOSFETs Applications
- High-efficiency power switching circuits
- Automotive power management systems
- Industrial motor control applications
Single FETs, MOSFETs Procurement Notes
Verify the specific ordering code Q67042-S4057 against the required P-TO263-3 package variant. Confirm that the component meets all electrical specifications for the intended operating temperature and current load conditions before finalizing procurement.
Single FETs, MOSFETs Selection Notes
Select this component for designs requiring high current handling in a surface-mount format. Ensure the gate drive circuit can supply sufficient voltage to achieve the specified low on-state resistance. Evaluate thermal management requirements based on the junction-to-case thermal resistance values provided in the datasheet.
Single FETs, MOSFETs Part Context
This part belongs to the OptiMOS family from Infineon Technologies. It shares core electrical characteristics with the SPI100N03S2-03 and SPP100N03S2-03 variants, differing primarily in the physical package type. The technology focuses on minimizing conduction losses while maintaining robust performance under transient conditions.
Single FETs, MOSFETs Replacement Considerations
Direct substitutes include SPI100N03S2-03 (P-TO262-3) and SPP100N03S2-03 (P-TO220-3). Verify pinout compatibility and thermal interface requirements when transitioning between these package types.
Single FETs, MOSFETs FAQ
What is the maximum single-pulse avalanche energy?
The maximum single-pulse avalanche energy is rated at 810 mJ under conditions of ID=80A, VDD=25V, and RGS=25W.
How does the on-state resistance vary with temperature?
The drain-source on-state resistance increases as the junction temperature rises, following the typical characteristic curve provided in the datasheet.
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