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SPB12N50C3ATMA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 560V 11.6A TO263-3. Review the specifications below when checking this part for your BOM.
The SPB12N50C3ATMA1 is a CoolMOS C3 N-channel power transistor in PG-TO263 package. It features a drain-source voltage of 560 V and continuous drain current of 11.6 A at 25 °C. The on-state resistance is 0.38 Ω at 10 V gate drive. Key electrical parameters include a total gate charge of 49 nC, input capacitance of 1200 pF, and avalanche energy rating of 340 mJ. Thermal resistance from junction to case is 1 K/W.
Verify the component marking '12N50C3' and ordering code Q67040-S4641 against official Infineon documentation. Confirm that the device is supplied in tape-and-reel packaging consistent with the ATMA1 suffix designation. Ensure compliance with RoHS standards as specified in the datasheet.
Select this component for applications requiring high breakdown voltage and efficient switching performance. Consider the thermal resistance and safe operating area when designing heat dissipation solutions. Evaluate the gate charge requirements against the available driver capabilities to ensure optimal switching speeds.
This part belongs to the CoolMOS C3 family, representing an evolution in high-voltage silicon technology. It offers enhanced performance over previous generations through reduced internal capacitances and optimized avalanche robustness, making it suitable for demanding industrial power conversion environments.
Consult official cross-reference tools for verified substitutes. Direct replacements must match the PG-TO263 package, 560 V rating, and similar RDS(on) specifications to maintain circuit integrity without redesigning thermal or gate drive networks.
Yes, the datasheet specifies a repetitive avalanche energy (EAR) of 0.6 mJ and a repetitive avalanche current (IAR) of 11.6 A.
The device supports a reverse diode dv/dt of up to 50 V/ns under specific test conditions involving VDS=400V and ID=11.6A.
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