Single FETs, MOSFETs SPB12N50C3ATMA1 product image

SPB12N50C3ATMA1

$2.20
  • Description:MOSFET N-CH 560V 11.6A TO263-3
  • Series:CoolMOS™
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR),Cut Tape (CT)

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SPB12N50C3ATMA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 560V 11.6A TO263-3. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for SPB12N50C3ATMA1

  • Description:MOSFET N-CH 560V 11.6A TO263-3
  • Series:CoolMOS™
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):560 V
  • Current - Continuous Drain (Id) @ 25°C:11.6A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:380mOhm @ 7A, 10V
  • Vgs(th) (Max) @ Id:3.9V @ 500µA
  • Gate Charge (Qg) (Max) @ Vgs:49 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:1200 pF @ 25 V
  • FET Feature:-
  • Power Dissipation (Max):125W (Tc)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Supplier Device Package:PG-TO263-3-2
  • Package / Case:TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Single FETs, MOSFETs datasheet and documents for SPB12N50C3ATMA1

SPB12N50C3ATMA1

Single FETs, MOSFETs Overview

The SPB12N50C3ATMA1 is a CoolMOS C3 N-channel power transistor in PG-TO263 package. It features a drain-source voltage of 560 V and continuous drain current of 11.6 A at 25 °C. The on-state resistance is 0.38 Ω at 10 V gate drive. Key electrical parameters include a total gate charge of 49 nC, input capacitance of 1200 pF, and avalanche energy rating of 340 mJ. Thermal resistance from junction to case is 1 K/W.

Single FETs, MOSFETs Feature Summary

  • Utilizes revolutionary high-voltage technology for ultra-low gate charge and extreme dv/dt ratings.
  • Features periodic avalanche capability with improved transconductance and low effective capacitances.

Single FETs, MOSFETs Applications

  • High-frequency switching power supplies
  • Uninterruptible power supply (UPS) systems
  • DC-to-AC motor drives

Single FETs, MOSFETs Procurement Notes

Verify the component marking '12N50C3' and ordering code Q67040-S4641 against official Infineon documentation. Confirm that the device is supplied in tape-and-reel packaging consistent with the ATMA1 suffix designation. Ensure compliance with RoHS standards as specified in the datasheet.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring high breakdown voltage and efficient switching performance. Consider the thermal resistance and safe operating area when designing heat dissipation solutions. Evaluate the gate charge requirements against the available driver capabilities to ensure optimal switching speeds.

Single FETs, MOSFETs Part Context

This part belongs to the CoolMOS C3 family, representing an evolution in high-voltage silicon technology. It offers enhanced performance over previous generations through reduced internal capacitances and optimized avalanche robustness, making it suitable for demanding industrial power conversion environments.

Single FETs, MOSFETs Replacement Considerations

Consult official cross-reference tools for verified substitutes. Direct replacements must match the PG-TO263 package, 560 V rating, and similar RDS(on) specifications to maintain circuit integrity without redesigning thermal or gate drive networks.

Single FETs, MOSFETs FAQ

Is the SPB12N50C3 rated for repetitive avalanche operation?

Yes, the datasheet specifies a repetitive avalanche energy (EAR) of 0.6 mJ and a repetitive avalanche current (IAR) of 11.6 A.

What is the maximum reverse diode dv/dt rating?

The device supports a reverse diode dv/dt of up to 50 V/ns under specific test conditions involving VDS=400V and ID=11.6A.

SPB12N50C3ATMA1SPB12N50C3ATMA1
$2.20
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