SPD06N80C3BTMA1

Single FETs, MOSFETs Overview

The SPD06N80C3BTMA1 is an N-channel Power MOSFET from Infineon's CoolMOS C3 series, designed for high-voltage switching applications. It features a maximum drain-source voltage of 800 V and a continuous drain current of 6 A at 25°C. The device utilizes superjunction technology to achieve low on-resistance, enhancing efficiency in hard-switching circuits. Packaged in a surface-mount TO-252 (DPAK) format with three pins, it supports operation within a temperature range of -55°C to +150°C junction temperature.

Single FETs, MOSFETs Feature Summary

• Superjunction technology enables low specific on-resistance for improved conduction efficiency.
• High breakdown voltage capability suitable for demanding power conversion topologies.
• Robust avalanche energy rating ensures reliability under transient overload conditions.

Single FETs, MOSFETs Applications

• High-frequency switched-mode power supplies
• Industrial motor control inverters
• Uninterruptible power supply (UPS) systems

Single FETs, MOSFETs Procurement Notes

Verify the exact suffix 'BTMA1' against official Infineon documentation to confirm tape-and-reel packaging specifications. Ensure the component matches the CoolMOS C3 generation requirements for your circuit design. Cross-reference the datasheet revision date to validate parameter consistency before finalizing procurement orders.

Single FETs, MOSFETs Selection Notes

Select this component when designing circuits requiring 800 V blocking capability with moderate current handling in a compact surface-mount footprint. Evaluate thermal management needs based on the TO-252 package dissipation characteristics. Compare total gate charge and switching losses against alternative superjunction devices to optimize system efficiency.

Single FETs, MOSFETs Part Context

This part belongs to the CoolMOS C3 family, representing a generation of superjunction MOSFETs optimized for hard-switching applications. It complements other variants in the SPD series that differ primarily in current ratings or packaging styles, providing designers with scalable options for high-voltage power electronics.

Single FETs, MOSFETs Replacement Considerations

Direct pin-compatible replacements may include other 800 V CoolMOS devices in TO-252 packages from the same manufacturer. Verify on-resistance and gate charge parameters closely to ensure equivalent performance in existing layouts without redesigning thermal paths.