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SPD25N06S2-40 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 55V 29A TO252-3. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for SPD25N06S2-40
- Description：MOSFET N-CH 55V 29A TO252-3
- Series：OptiMOS™
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：55 V
- Current - Continuous Drain (Id) @ 25°C：29A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：40mOhm @ 13A, 10V
- Vgs(th) (Max) @ Id：4V @ 26µA
- Gate Charge (Qg) (Max) @ Vgs：18 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：710 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：68W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：PG-TO252-3-11
- Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
Single FETs, MOSFETs datasheet and documents for SPD25N06S2-40
Single FETs, MOSFETs Overview
The SPD25N06S2-40 is an N-channel enhancement mode MOSFET from Infineon's OptiMOS family, housed in a P-TO252-3-11 surface-mount package. It features a drain-source breakdown voltage of 55 V and a continuous drain current of 29 A at 25°C case temperature. The device exhibits a maximum on-state resistance of 40 mΩ and supports a power dissipation of 68 W. It operates within a junction temperature range of -55°C to +175°C and includes avalanche and dv/dt ratings for robust switching performance.
Single FETs, MOSFETs Feature Summary
- OptiMOS technology providing low on-state resistance for efficient power switching
- Avalanche rated capability for handling energy surges
- dv/dt rated design ensuring stability during rapid voltage transitions
- Enhanced thermal management with a maximum operating temperature of 175°C
Single FETs, MOSFETs Applications
- DC-DC converter circuits
- Motor control systems
- Power supply modules
Single FETs, MOSFETs Procurement Notes
Verify the specific ordering code Q67060-S7427 against procurement requirements. Confirm that the component designation matches the official documentation which notes the part number as BSPD25N06S2-40 for technical accuracy. Ensure compatibility with the specified TO-252-3-11 footprint and lead configuration before finalizing orders.
Single FETs, MOSFETs Selection Notes
Select this component for applications requiring high current handling up to 29 A and robust thermal performance up to 175°C. Consider its 40 mΩ maximum on-resistance for efficiency optimization. Verify that the 55 V breakdown voltage aligns with system voltage levels and that the TO-252-3-11 package fits the PCB layout constraints.
Single FETs, MOSFETs Part Context
This device belongs to Infineon's OptiMOS Power-Transistor series, designed for general-purpose power switching. It utilizes silicon technology and is manufactured by Infineon Technologies AG. The component is distinct from other OptiMOS variants by its specific voltage and current ratings combined with the P-TO252-3-11 package style.
Single FETs, MOSFETs Replacement Considerations
Cross-reference with similar N-channel MOSFETs offering comparable 55 V ratings and TO-252 packages. Verify pinout compatibility and ensure replacement parts meet or exceed the 29 A current and 175°C temperature specifications.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
