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SPP07N60C3XKSA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 650V 7.3A TO220-3. Review the specifications below when checking this part for your BOM.
The SPP07N60C3XKSA1 is a single N-channel enhancement-mode power MOSFET from Infineon's CoolMOS C3 series. It features a 600 V drain-source breakdown voltage and a continuous drain current of 7.3 A. The device has a maximum on-state resistance of 600 mΩ at 10 V gate drive. It utilizes a PG-TO220-3-31 through-hole package with a thermal resistance junction-to-case of 1.5 K/W. The component operates within a temperature range of -55°C to +150°C.
Verify the specific suffix XKSA1 against official Infineon documentation to confirm lead-free status and RoHS compliance details. Confirm the package designation PG-TO220-3-31 matches your PCB footprint requirements. Check for any recent lifecycle notices such as NRND or obsolescence warnings before finalizing procurement plans.
Select this component when a 600V rating is required with moderate current handling up to 7.3A. The low gate charge supports high-frequency switching applications. Ensure adequate heatsinking is provided due to the 1.5 K/W junction-to-case thermal resistance. Compare against other CoolMOS generations if lower on-resistance is needed for higher current loads.
This part belongs to the CoolMOS C3 family, representing an advanced generation of high-voltage power MOSFETs. It is designed to replace older technologies by offering reduced switching losses and higher power density. The TO-220 form factor provides a standard solution for through-hole mounting in various power electronics designs.
Direct substitutes include SPA07N60C3XKSA1 and SPP07N60C3. Verify pinout compatibility and thermal characteristics when swapping between these variants.
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