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SPS04N60C3E8177AKMA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is LOW POWER_LEGACY. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for SPS04N60C3E8177AKMA1
- Description：LOW POWER_LEGACY
- Series：*
- Mfr：Infineon Technologies
- Package：Bulk
- FET Type：-
- Technology：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-
- Grade：-
- Qualification：-
- Mounting Type：-
- Supplier Device Package：-
- Package / Case：-
Single FETs, MOSFETs datasheet and documents for SPS04N60C3E8177AKMA1
Single FETs, MOSFETs Overview
The SPS04N60C3E8177AKMA1 is a silicon N-channel power MOSFET from Infineon Technologies, belonging to the CoolMOS C3 series. It utilizes a PG-TO251-3 package for through-hole mounting. The device features a drain-source breakdown voltage of 600 V and a continuous drain current of 4.5 A. Key electrical characteristics include a maximum on-resistance of 1.4 Ohms at 10 V gate drive and a typical gate charge of 13 nC. It supports an operating temperature range from -55 °C to +150 °C with a power dissipation rating of 38 W.
Single FETs, MOSFETs Feature Summary
- Utilizes CoolMOS C3 technology for optimized switching performance in hard and soft switching applications.
- Designed for robust operation with high avalanche energy capability and low thermal resistance.
- Features a standard TO-251 (IPAK SL) surface-mount package for efficient PCB integration.
Single FETs, MOSFETs Applications
- Switch-mode power supplies (SMPS)
- High-voltage DC/DC converters
- Industrial motor control circuits
Single FETs, MOSFETs Procurement Notes
Verify component authenticity by checking the marking code against official Infineon documentation. Confirm RoHS compliance status as indicated in the datasheet. Ensure storage conditions meet moisture sensitivity requirements prior to assembly. Cross-reference the full part number to distinguish between specific tape-and-reel or tube packaging variants available from authorized distributors.
Single FETs, MOSFETs Selection Notes
Select this component when a 600 V rated N-channel MOSFET is required for medium-power applications. The 1.4 Ohm on-resistance suits designs prioritizing cost-effectiveness over ultra-low conduction losses. Consider the TO-251 package constraints for thermal management. Evaluate gate charge requirements against driver capabilities to ensure adequate switching speeds within the target frequency range.
Single FETs, MOSFETs Part Context
This part belongs to the CoolMOS C3 family, representing a generation of superjunction MOSFETs designed for efficiency improvements over earlier technologies. Infineon Technologies manufactures these devices using advanced silicon processes. The CoolMOS portfolio targets various power levels, with the C3 series offering a balance of performance and manufacturability for general-purpose power electronics.
Single FETs, MOSFETs Replacement Considerations
Consult official cross-reference tools for direct substitutes. Potential alternatives may include other 600 V N-channel MOSFETs in TO-251 packages with comparable Rds(on) and Vds ratings. Verify pinout compatibility and thermal characteristics before substitution.
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