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Product Detailed Parameters
- Description：MOSFET 2N-CH 30V 8A 8SOIC
- Series：TrenchFET®
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：8A
- Rds On (Max) @ Id, Vgs：14.5mOhm @ 6A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：30nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：1465pF @ 15V
- Power - Max：4.4W
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SOIC
- Grade：-
- Qualification：-
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Overview
The SQ4920EY-T1_GE3 is an automotive-grade dual N-channel MOSFET from Vishay Siliconix, utilizing TrenchFET technology. It features a 30 V drain-source voltage rating and operates within a junction temperature range of -55 °C to +175 °C. Each channel provides a continuous drain current of 8 A at 25 °C case temperature. The device exhibits a maximum on-state resistance of 0.0175 Ω at VGS = 4.5 V and 0.0145 Ω at VGS = 10 V. Packaged in an SO-8 footprint, it is AEC-Q101 qualified and includes 100% Rg and UIS testing.
Feature Summary
- Dual N-channel configuration with integrated body diodes for efficient switching applications
- AEC-Q101 qualification ensuring reliability for demanding automotive environments
- TrenchFET power MOSFET architecture providing low on-resistance and optimized gate charge
Applications
- Automotive load switching circuits
- High-side and low-side power management modules
- DC motor control interfaces
Procurement Notes
Verify the specific ordering suffix against official documentation to confirm package type and compliance status. Ensure that the component meets the required thermal and electrical specifications for the target application environment before finalizing procurement decisions.
Selection Notes
Select this component for designs requiring robust automotive-grade dual N-channel switching capabilities. Evaluate the thermal dissipation requirements based on the specified junction-to-ambient resistance and ensure the PCB layout supports the recommended land pattern for optimal heat transfer.
Part Context
This part belongs to the Vishay Siliconix SQ49xx series of automotive MOSFETs. It shares the SO-8 package form factor with other devices in the lineup but differs in voltage ratings and current handling capabilities. The series is designed specifically for high-reliability automotive electronic systems.
Replacement Considerations
Direct pin-compatible replacements within the same package must be verified against the absolute maximum ratings and on-resistance specifications. Consult the manufacturer's cross-reference tools or datasheets for alternative parts offering similar electrical performance and thermal characteristics.
