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The Vishay Siliconix SQJ204EP-T1_GE3 is an automotive-grade dual N-channel MOSFET utilizing TrenchFET technology. It features a 12 V drain-source voltage rating and operates within a junction temperature range of -55 °C to +175 °C. The device employs a PowerPAK SO-8L Dual Asymmetric package. Channel 1 provides a continuous drain current of 20 A with a maximum on-resistance of 8.3 mΩ at VGS = 10 V. Channel 2 supports 60 A with a maximum on-resistance of 3.0 mΩ under the same conditions.
Verify component authenticity by cross-referencing the manufacturer's official datasheet document number 76441. Confirm that the specific ordering suffix matches the required RoHS compliance and tape-and-reel packaging specifications. Ensure the received parts correspond exactly to the SQJ204EP-T1_GE3 designation to avoid functional mismatches in circuit designs.
Select this component when designing low-voltage synchronous rectification stages requiring high efficiency. The asymmetric channel configuration allows for optimized current handling, making it suitable for applications where one switch requires significantly higher current capacity than the other. Verify thermal management requirements against the specified junction-to-case thermal resistance values.
This part belongs to the Vishay Siliconix SQJ series of automotive MOSFETs. It utilizes the TrenchFET power cell architecture to achieve low on-resistance. The device is housed in the PowerPAK SO-8L Dual Asymmetric package, which is designed to minimize thermal impedance and footprint size compared to standard packages.
Direct replacements must match the 12 V rating, dual N-channel configuration, and PowerPAK SO-8L Dual Asymmetric package. Verify that any substitute maintains equivalent AEC-Q101 qualification and similar RDS(on) characteristics for both channels to ensure circuit performance parity.
The absolute maximum gate-source voltage (VGS) rating is ±12 V.
No, the PowerPAK SO-8L is a leadless package. The end of the lead terminal is exposed copper as a result of the singulation process.
The typical turn-on delay time (td(on)) for Channel 2 is 17 ns under standard test conditions.