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SQJ460AEP-T1_BE3 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Vishay Siliconix. Its product description is N-CHANNEL 60-V (D-S) 175C MOSFET. Review the specifications below when checking this part for your BOM.
The Vishay Siliconix SQJ460AEP-T1_BE3 is an automotive-grade, single N-channel Power MOSFET utilizing TrenchFET technology. It features a 60 V drain-source voltage rating and supports a continuous drain current of 58 A at 25 °C case temperature. The device offers a maximum on-state resistance of 8.7 mΩ at VGS = 10 V and 9.4 mΩ at VGS = 4.5 V. It operates within a junction temperature range of -55 °C to +175 °C and is housed in a leadless PowerPAK SO-8L package.
Verify the specific ordering suffix against official documentation to confirm compliance with halogen-free and lead-free material requirements. Confirm that the component meets the necessary AEC-Q101 qualification standards required for your specific automotive application environment before finalizing procurement.
Select this component when a single N-channel configuration with high current handling capability is required. Ensure the gate drive voltage aligns with the specified thresholds for optimal RDS(on) performance. Verify thermal management capabilities to maintain junction temperatures within the specified operating range during continuous operation.
This part belongs to the SQJ460AEP series from Vishay Siliconix. It is designed specifically for demanding automotive environments requiring robust switching performance. The device integrates advanced trench technology to minimize conduction losses while maintaining high breakdown voltage capabilities suitable for 12V and 24V automotive systems.
SQJ460AEP-T1_GE3
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