Single FETs, MOSFETs SQJ488EP-T1_BE3 product image

SQJ488EP-T1_BE3

$1.62
  • Description:MOSFET N-CH 100V 42A PPAK SO-8
  • Series:TrenchFET®
  • Mfr:Vishay Siliconix
  • Package:Tape & Reel (TR),Cut Tape (CT)

SKU:ef02081d7737 Category: Brand:

  
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SQJ488EP-T1_BE3 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Vishay Siliconix. Its product description is MOSFET N-CH 100V 42A PPAK SO-8. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for SQJ488EP-T1_BE3

  • Description:MOSFET N-CH 100V 42A PPAK SO-8
  • Series:TrenchFET®
  • Mfr:Vishay Siliconix
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):100 V
  • Current - Continuous Drain (Id) @ 25°C:42A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
  • Rds On (Max) @ Id, Vgs:21mOhm @ 7.1A, 10V
  • Vgs(th) (Max) @ Id:2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:27 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:978 pF @ 50 V
  • FET Feature:-
  • Power Dissipation (Max):83W (Tc)
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Grade:Automotive
  • Qualification:AEC-Q101
  • Mounting Type:Surface Mount
  • Supplier Device Package:PowerPAK® SO-8
  • Package / Case:PowerPAK® SO-8

Single FETs, MOSFETs datasheet and documents for SQJ488EP-T1_BE3

SQJ488EP-T1_BE3

Single FETs, MOSFETs Overview

The SQJ488EP-T1_BE3 is an automotive-grade N-channel MOSFET utilizing TrenchFET technology, rated for a drain-source voltage of 100 V and continuous drain current of 42 A. It features a low on-state resistance of 0.0176 Ω at VGS = 10 V and operates within a junction temperature range of -55 °C to +175 °C. The component is housed in a leadless PowerPAK SO-8L package and is qualified under the AEC-Q101 standard.

Single FETs, MOSFETs Feature Summary

  • Automotive qualification compliant with AEC-Q101 standards
  • TrenchFET power MOSFET architecture for optimized performance
  • 100% gate resistance and unclamped inductive switching (UIS) tested

Single FETs, MOSFETs Applications

  • Automotive electronic systems requiring high reliability
  • High-side or low-side switching applications
  • Power management circuits operating up to 175 °C

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix against official documentation to confirm compliance requirements. Confirm that the component status aligns with design lifecycle needs, as availability may vary based on manufacturing location and production schedules.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring robust avalanche energy handling and high thermal stability. Ensure the PCB layout accommodates the exposed copper bottom side of the PowerPAK SO-8L package for adequate heat dissipation and soldering integrity.

Single FETs, MOSFETs Part Context

This part belongs to the Vishay Siliconix SQJ series of automotive MOSFETs. It is designed for demanding environments where high current density and thermal resilience are critical. The single-channel configuration simplifies driver circuitry compared to dual or complementary pairs.

Single FETs, MOSFETs Replacement Considerations

Check datasheet compatibility for pinout and electrical parameters before substituting. Verify if alternative parts meet the same AEC-Q101 qualification and thermal resistance ratings.

SQJ488EP-T1_BE3SQJ488EP-T1_BE3
$1.62
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