SQJ500AEP-T1_BE3

$1.83

Description：MOSFET N/P-CH 40V 30A PPAK SO8
Series：TrenchFET®

SKU:7b9533299d87 Category: FET, MOSFET Arrays Brand: Vishay Siliconix

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Product introduction

Product Detailed Parameters

Description：MOSFET N/P-CH 40V 30A PPAK SO8
Series：TrenchFET®
Mfr：Vishay Siliconix
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：N and P-Channel
FET Feature：-
Drain to Source Voltage (Vdss)：40V
Current - Continuous Drain (Id) @ 25°C：30A (Tc)
Rds On (Max) @ Id, Vgs：9.2mOhm @ 9.8A, 10V, 27mOhm @ 6A, 10V
Vgs(th) (Max) @ Id：2.3V @ 250µA, 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：38.3nC @ 10V, 45nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：1843pF @ 20V, 1628pF @ 20V
Power - Max：48W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Mounting Type：Surface Mount
Package / Case：PowerPAK® SO-8
Supplier Device Package：PowerPAK® SO-8
Grade：Automotive
Qualification：AEC-Q101

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SQJ500AEP-T1_BE3

Overview

The SQJ500AEP-T1_BE3 is an automotive-grade N- and P-channel MOSFET pair utilizing TrenchFET technology. It features a PowerPAK SO-8L dual package with a drain-source voltage of ±40 V and continuous drain current of ±30 A at 25 °C. The N-channel on-resistance is typically 9.2 mΩ at VGS = 10 V, while the P-channel is 27 mΩ. Total gate charges are 25.5 nC (N) and 30.2 nC (P). Operating junction temperature ranges from -55 °C to +175 °C, and maximum power dissipation is 48 W.

Feature Summary

Automotive qualification compliant with AEC-Q101 standards
Integrated N-Channel and P-Channel configuration in a single dual package
TrenchFET power MOSFET architecture for optimized performance

Applications

Automotive electronic control units
High-side and low-side switching circuits
Power management modules requiring compact dual-channel solutions

Procurement Notes

Verify component authenticity by cross-referencing the manufacturer's document number 62878 and revision history. Confirm that the ordering suffix corresponds to lead-free and halogen-free specifications as defined in Vishay documentation. Ensure compatibility with the specified PowerPAK SO-8L footprint during procurement validation.

Selection Notes

Select this component when a matched N- and P-channel pair is required within a single surface-mount package. The device supports high-current applications up to 30 A with low on-resistance characteristics. Verify thermal management requirements against the 85 °C/W junction-to-ambient rating for PCB-mounted configurations.

Part Context

This part belongs to the SQJ series of automotive MOSFETs manufactured by Vishay Siliconix. It utilizes the PowerPAK SO-8L leadless package design, which provides enhanced thermal performance compared to standard packages. The product line is specifically engineered for robust operation in demanding automotive environments.

Replacement Considerations

Direct substitutes include other Vishay SQJ series dual MOSFETs with matching voltage and current ratings. Verify pinout compatibility and thermal resistance values before replacing. Cross-reference datasheet parameters to ensure equivalent switching speeds and gate charge characteristics.