SQJ941EP-T1-GE3

Overview

The SQJ941EP-T1-GE3 is an automotive-grade dual P-channel MOSFET from Vishay Siliconix, utilizing TrenchFET technology. It features a -30 V drain-source voltage and an on-state resistance of 24 mΩ at VGS = -10 V. Each channel supports a continuous drain current of 8 A and handles a pulsed current up to 32 A. The device operates within a junction temperature range of -55 °C to +175 °C and is housed in a leadless PowerPAK SO-8L package.

Feature Summary

• AEC-Q101 qualified for automotive reliability standards
• TrenchFET power MOSFET architecture with 100% gate resistance and UIS testing
• Lead-free and halogen-free construction

Applications

• Automotive load switching applications
• High-side power control circuits
• Low-voltage DC-DC converter topologies

Procurement Notes

Verify the component against official Vishay datasheet document number 65546 to confirm technical specifications. Ensure the ordering suffix matches the required lead-free and halogen-free configuration. Validate that the PowerPAK SO-8L package dimensions align with the target PCB footprint requirements before finalizing procurement.

Selection Notes

Select this component for designs requiring robust automotive-grade dual P-channel switching capabilities. The low on-resistance minimizes conduction losses, while the wide operating temperature range ensures stability in harsh environments. Evaluate thermal management needs based on the specified junction-to-case resistance ratings.

Part Context

This part belongs to the SQJ series of automotive MOSFETs manufactured by Vishay Siliconix. It shares the PowerPAK SO-8L package form factor with other devices in the lineup but offers specific electrical characteristics tailored for high-current, low-voltage automotive applications.

Replacement Considerations

Direct substitutes include other Vishay dual P-channel MOSFETs in the same package, such as the SQJ942EP or SQJ943EP, provided their voltage and current ratings meet the application requirements.