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Product Detailed Parameters
- Description：MOSFET 2N-CH 40V 15A PPAK SO8
- Series：TrenchFET®
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：40V
- Current - Continuous Drain (Id) @ 25°C：15A (Tc), 45A (Tc)
- Rds On (Max) @ Id, Vgs：22mOhm @ 7.8A, 10V, 11mOhm @ 10.1A, 10V
- Vgs(th) (Max) @ Id：2.3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：19.7nC @ 10V, 33.8nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：809pF @ 20V, 1451pF @ 20V
- Power - Max：17W, 48W
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：PowerPAK® SO-8
- Supplier Device Package：PowerPAK® SO-8
- Grade：Automotive
- Qualification：AEC-Q101
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Overview
The Vishay Siliconix SQJ942EP-T1_GE3 is an automotive-grade dual N-channel MOSFET utilizing TrenchFET technology. It features a 40 V drain-source voltage rating and operates within a junction temperature range of -55 °C to +175 °C. The device contains two asymmetric channels in a PowerPAK SO-8L package. Channel 1 provides a continuous drain current of 15 A with a maximum on-resistance of 0.022 Ω at VGS = 10 V. Channel 2 supports up to 45 A continuous current with a maximum on-resistance of 0.011 Ω at VGS = 10 V. Both channels are qualified under AEC-Q101 standards.
Feature Summary
- AEC-Q101 qualified for automotive reliability requirements
- TrenchFET power MOSFET architecture for optimized performance
- Asymmetric dual configuration allowing independent channel sizing
- 100% gate resistance and unclamped inductive switching tested
Applications
- Automotive power distribution systems
- High-side and low-side load switch applications
- DC motor control circuits
- Lighting control modules
Procurement Notes
Verify the specific ordering suffix against official documentation to confirm lead-free and halogen-free status. Confirm that the component meets the required AEC-Q101 qualification level before integration into designs. Ensure thermal management aligns with the specified junction-to-case and junction-to-ambient resistance values provided in the datasheet.
Selection Notes
Select this component when a dual N-channel solution with distinct current handling capabilities is required in a compact surface-mount footprint. The asymmetric design allows one channel to handle higher currents while the other manages lower loads, optimizing board space. Verify that the 40 V breakdown voltage is sufficient for the target circuit's operating conditions.
Part Context
This part belongs to the SQJ942EP series from Vishay Siliconix. It is designed specifically for automotive environments requiring high reliability and robust switching performance. The PowerPAK SO-8L package offers improved thermal dissipation compared to standard SO-8 packages.
Replacement Considerations
Direct replacements must match the 40 V rating, dual N-channel configuration, and PowerPAK SO-8L package. Verify that any substitute maintains equivalent RDS(on) specifications and AEC-Q101 qualification if automotive use is intended.
