SQJ992EP-T1_BE3

Overview

The SQJ992EP-T1_BE3 is an automotive-grade dual N-channel MOSFET from Vishay Siliconix, utilizing TrenchFET technology. It features a 60 V drain-source voltage and a continuous drain current of 15 A per leg at 25 °C. The device offers a maximum on-resistance of 0.0562 Ω at VGS = 10 V and 0.0745 Ω at VGS = 4.5 V. Packaged in a leadless PowerPAK SO-8L, it supports junction temperatures up to 175 °C and is AEC-Q101 qualified.

Feature Summary

• AEC-Q101 qualified for automotive reliability
• TrenchFET power MOSFET architecture
• 100% Rg and UIS tested

Applications

• Automotive electronic systems
• High-side or low-side switching applications
• Power management circuits requiring 175 °C operation

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm package type and compliance status. Confirm that the component meets the required AEC-Q101 qualification standards for your target application. Ensure compatibility with the specified PowerPAK SO-8L footprint during PCB design.

Selection Notes

Select this component for designs requiring dual N-channel switching with high thermal tolerance. Evaluate the on-resistance values at your intended gate drive voltage (4.5 V or 10 V) to ensure efficiency targets are met. Consider the thermal resistance ratings when designing the heat dissipation strategy for the PowerPAK SO-8L package.

Part Context

This part belongs to the SQJ series of automotive MOSFETs from Vishay Siliconix. It shares the PowerPAK SO-8L package form factor with other devices in the lineup but differs in voltage and current ratings. The 'BE3' suffix indicates specific packaging and compliance attributes defined by the manufacturer.

Replacement Considerations

Check for direct substitutes within the SQJ series that match the 60 V rating and dual configuration. Verify pinout compatibility and thermal characteristics before substituting. Consult Vishay's official cross-reference tools for validated alternatives.