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SQJA16EP-T1_GE3 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Vishay Siliconix. Its product description is AUTOMOTIVE N-CHANNEL 60 V (D-S). Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for SQJA16EP-T1_GE3
- Description：AUTOMOTIVE N-CHANNEL 60 V (D-S)
- Series：TrenchFET®
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：278A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：3mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：84 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：5485 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：500W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：PowerPAK® SO-8
- Package / Case：PowerPAK® SO-8
Single FETs, MOSFETs datasheet and documents for SQJA16EP-T1_GE3
Single FETs, MOSFETs Overview
The SQJA16EP-T1_GE3 is an automotive-grade N-channel power MOSFET from Vishay Siliconix, utilizing TrenchFET technology. It features a 60 V drain-source voltage rating and operates within a junction temperature range of -55 °C to +175 °C. The device provides a continuous drain current of 278 A at 25 °C case temperature, with a maximum on-state resistance of 3.0 mΩ at VGS = 10 V. Packaged in a PowerPAK SO-8L surface-mount configuration, it supports high-power applications requiring robust thermal performance.
Single FETs, MOSFETs Feature Summary
- AEC-Q101 qualified for automotive reliability standards
- TrenchFET power MOSFET architecture for optimized conduction
- 100% tested for gate charge and single pulse avalanche energy
Single FETs, MOSFETs Applications
- Automotive power distribution systems
- High-current DC-DC converter circuits
- Motor control and switching applications
Single FETs, MOSFETs Procurement Notes
Verify the specific suffix (GE3) against official documentation to confirm compliance details. Confirm package type and pinout alignment with PCB layout requirements. Validate thermal management strategies based on datasheet ratings. Ensure application conditions remain within absolute maximum limits. Cross-reference ordering information directly with manufacturer sources.
Single FETs, MOSFETs Selection Notes
Evaluate thermal dissipation capabilities relative to the intended operating environment. Compare on-resistance values across different gate drive voltages for efficiency optimization. Assess package suitability for required current handling and mounting constraints. Review avalanche energy ratings if inductive load switching is anticipated. Verify compatibility with system voltage levels and switching frequencies.
Single FETs, MOSFETs Part Context
This component belongs to the Vishay Siliconix SQJA series of automotive N-channel MOSFETs. It is designed specifically for demanding automotive environments requiring high current density and ruggedness. The PowerPAK SO-8L package offers a compact footprint suitable for space-constrained board designs while maintaining low thermal resistance.
Single FETs, MOSFETs Replacement Considerations
Consult official Vishay substitution guides or contact technical support for verified alternatives. Do not assume functional equivalence based solely on voltage and current ratings. Verify package dimensions and pin configurations before implementation.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
