SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The SQJB60EP-T2_GE3 is an automotive-grade dual N-channel MOSFET from Vishay Siliconix, utilizing TrenchFET technology. It features a 60 V drain-source voltage rating and supports continuous drain currents of 30 A per leg at 25 °C case temperature. The device offers low on-state resistance, typically 12 mΩ at VGS = 10 V and 16 mΩ at VGS = 4.5 V. Packaged in a leadless PowerPAK SO-8L footprint, it is qualified to AEC-Q101 standards and rated for junction temperatures up to 175 °C.
Verify the specific ordering suffix against official documentation to confirm package type and reel specifications. Ensure that the procurement channel sources components directly from authorized distributors to guarantee authenticity and traceability. Cross-reference the manufacturer's document number 77774 when validating technical parameters during the sourcing process.
Select this component for designs requiring two isolated channels within a minimal surface area footprint. Evaluate thermal management requirements based on the specified junction-to-case resistance. Confirm that the gate drive voltage aligns with the threshold characteristics to ensure optimal on-state performance under varying load conditions.
This part belongs to the SQJB series of automotive dual MOSFETs manufactured by Vishay Siliconix. The series is engineered to provide robust power switching capabilities in space-constrained automotive modules. The PowerPAK SO-8L package facilitates efficient heat dissipation through direct copper exposure on the underside.
The datasheet lists SQJB60EP-T1 as a related ordering option within the same product family. Verify pinout compatibility and exact parameter tolerances before substituting variants. Consult the manufacturer's cross-reference tools for alternative components if the primary part is unavailable.