SQJB60EP-T2_GE3

SQJB60EP-T2_GE3

$0.40
  • Description:MOSFET 2N-CH 60V 30A PPAK SO8
  • Series:TrenchFET®

SKU:5294161eeba3 Category: Brand:

  
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Product Detailed Parameters

  • Description:MOSFET 2N-CH 60V 30A PPAK SO8
  • Series:TrenchFET®
  • Mfr:Vishay Siliconix
  • Package:Tape & Reel (TR)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 N-Channel (Dual)
  • FET Feature:-
  • Drain to Source Voltage (Vdss):60V
  • Current - Continuous Drain (Id) @ 25°C:30A (Tc)
  • Rds On (Max) @ Id, Vgs:12mOhm @ 10A, 10V
  • Vgs(th) (Max) @ Id:2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:30nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds:1600pF @ 25V
  • Power - Max:48W (Tc)
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:PowerPAK® SO-8 Dual
  • Supplier Device Package:PowerPAK® SO-8 Dual
  • Grade:Automotive
  • Qualification:AEC-Q101

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SQJB60EP-T2_GE3

Overview

The SQJB60EP-T2_GE3 is an automotive-grade dual N-channel MOSFET from Vishay Siliconix, utilizing TrenchFET technology. It features a 60 V drain-source voltage rating and supports continuous drain currents of 30 A per leg at 25 °C case temperature. The device offers low on-state resistance, typically 12 mΩ at VGS = 10 V and 16 mΩ at VGS = 4.5 V. Packaged in a leadless PowerPAK SO-8L footprint, it is qualified to AEC-Q101 standards and rated for junction temperatures up to 175 °C.

Feature Summary

  • Dual configuration with independent N-channel MOSFETs integrated into a single compact package.
  • AEC-Q101 qualification ensuring reliability for demanding automotive electronic environments.
  • TrenchFET power architecture designed to minimize conduction losses and improve switching efficiency.

Applications

  • Automotive high-side or low-side load switch circuits
  • DC motor control applications requiring bidirectional current handling
  • Power distribution units within vehicle electrical architectures

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm package type and reel specifications. Ensure that the procurement channel sources components directly from authorized distributors to guarantee authenticity and traceability. Cross-reference the manufacturer's document number 77774 when validating technical parameters during the sourcing process.

Selection Notes

Select this component for designs requiring two isolated channels within a minimal surface area footprint. Evaluate thermal management requirements based on the specified junction-to-case resistance. Confirm that the gate drive voltage aligns with the threshold characteristics to ensure optimal on-state performance under varying load conditions.

Part Context

This part belongs to the SQJB series of automotive dual MOSFETs manufactured by Vishay Siliconix. The series is engineered to provide robust power switching capabilities in space-constrained automotive modules. The PowerPAK SO-8L package facilitates efficient heat dissipation through direct copper exposure on the underside.

Replacement Considerations

The datasheet lists SQJB60EP-T1 as a related ordering option within the same product family. Verify pinout compatibility and exact parameter tolerances before substituting variants. Consult the manufacturer's cross-reference tools for alternative components if the primary part is unavailable.

SQJB60EP-T2_GE3SQJB60EP-T2_GE3
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