SQJB90EP-T1_GE3

Overview

The SQJB90EP-T1_GE3 is an automotive-grade dual N-channel MOSFET from Vishay Siliconix, utilizing TrenchFET technology. It features a drain-source voltage (VDS) of 80 V and a continuous drain current (ID) of 30 A per leg at 25 °C. The typical on-state resistance (RDS(on)) is 0.0215 Ω at VGS = 10 V. Packaged in a leadless PowerPAK SO-8L, it supports junction temperatures up to 175 °C and is qualified under AEC-Q101 standards.

Feature Summary

• AEC-Q101 qualified for automotive reliability
• TrenchFET power MOSFET architecture
• 100% Rg and UIS tested

Applications

• Automotive electronic systems requiring high thermal stability
• Low-side switching applications with 80 V rail requirements
• Power management circuits operating up to 175 °C junction temperature

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to ensure correct packaging and material compliance. Confirm that the component meets the required AEC-Q101 qualification level for your target application environment. Cross-reference the datasheet revision date to ensure all electrical parameters match your design specifications before finalizing procurement orders.

Selection Notes

Select this component when a dual N-channel configuration is required within a compact PowerPAK SO-8L footprint. Ensure the application can accommodate the 0.0215 Ω typical RDS(on) at VGS = 10 V. Verify that the PCB layout supports the exposed copper bottom side for adequate thermal dissipation, as the package lacks plated leads.

Part Context

This part belongs to the Vishay Siliconix SQJB series of automotive dual N-channel MOSFETs. It shares the PowerPAK SO-8L package form factor with other devices in the lineup but is distinguished by its 80 V rating and specific on-resistance characteristics tailored for high-current automotive switching applications.

Replacement Considerations

Direct substitutes must match the 80 V VDS, dual N-channel configuration, and PowerPAK SO-8L package. Verify that any alternative device meets AEC-Q101 qualification and has comparable RDS(on) and thermal resistance values to maintain circuit performance.