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Product Detailed Parameters
- Description：MOSFET 2N-CH 40V 100A PPAK8X8
- Series：TrenchFET®
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：40V
- Current - Continuous Drain (Id) @ 25°C：100A (Tc)
- Rds On (Max) @ Id, Vgs：3.9mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：120nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：5900pF @ 20V
- Power - Max：75W
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：PowerPAK® 8 x 8 Dual
- Supplier Device Package：PowerPAK® 8 x 8 Dual
- Grade：Automotive
- Qualification：AEC-Q101
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Overview
The SQJQ900E-T1_GE3 is an automotive-grade dual N-channel MOSFET from Vishay Siliconix, utilizing TrenchFET technology. It features a 40 V drain-source voltage rating and supports a continuous drain current of 100 A per leg at 25 °C case temperature. The device exhibits a maximum on-state resistance of 3.9 mΩ at VGS = 10 V and 4.7 mΩ at VGS = 4.5 V. It operates within a junction temperature range of -55 °C to +175 °C and is housed in a leadless PowerPAK 8 x 8L package.
Feature Summary
- AEC-Q101 qualified for automotive reliability standards
- TrenchFET power MOSFET architecture for optimized performance
- 100% tested for both RDS(on) and single-pulse avalanche energy
Applications
- Automotive power distribution systems
- High-current DC-DC converter stages
- Motor control applications requiring low on-resistance
Procurement Notes
Verify the component against the official Vishay datasheet (Document Number: 62796). Confirm that the ordering suffix matches the specific tape-and-reel packaging requirements. Ensure the received parts are fully lead-free and comply with material categorization definitions for compliance as outlined in the manufacturer's documentation.
Selection Notes
Select this component when designing circuits requiring high current handling capability in a compact surface-mount footprint. The dual configuration allows for efficient half-bridge or synchronous rectifier topologies. Evaluate thermal management strategies based on the specified junction-to-case thermal resistance to maintain operation within the 175 °C limit under load.
Part Context
This part belongs to the SQJQ series of Vishay Siliconix automotive MOSFETs. It is designed specifically for high-power density applications where low conduction losses and robust avalanche ruggedness are critical. The PowerPAK 8 x 8L package provides superior thermal dissipation compared to standard SO-8 packages.
Replacement Considerations
Direct replacements must match the 40 V rating, dual N-channel configuration, and PowerPAK 8 x 8L package dimensions. Verify that any substitute also holds AEC-Q101 qualification if used in automotive contexts.
