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SQRS140ELP-T1_GE3 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Vishay Siliconix. Its product description is AUTOMOTIVE N-CHANNEL 40 V (D-S). Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for SQRS140ELP-T1_GE3
- Description：AUTOMOTIVE N-CHANNEL 40 V (D-S)
- Series：TrenchFET® GenIV
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：40 V
- Current - Continuous Drain (Id) @ 25°C：504A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：0.6mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id：2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：294 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：15398 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：266W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：PowerPAK® SO-8SW
- Package / Case：PowerPAK® SO-8
Single FETs, MOSFETs datasheet and documents for SQRS140ELP-T1_GE3
Single FETs, MOSFETs Overview
The SQRS140ELP-T1_GE3 is an automotive-grade N-channel MOSFET utilizing TrenchFET Gen IV technology. It features a 40 V drain-source voltage rating and operates up to +175 °C junction temperature. The device offers a maximum on-resistance of 870 µΩ at VGS = 4.5 V and 600 µΩ at VGS = 10 V, supporting a continuous drain current of 504 A. Packaged in a PowerPAK SO-8SW footprint, it includes total gate charge of 196 nC and forward transconductance of 160 S.
Single FETs, MOSFETs Feature Summary
- AEC-Q101 qualified for automotive reliability standards
- TrenchFET Gen IV power MOSFET architecture
- 100% Rg and UIS tested for enhanced robustness
Single FETs, MOSFETs Applications
- Automotive power distribution systems
- High-current DC-DC converter modules
- Motor control applications requiring low on-resistance
Single FETs, MOSFETs Procurement Notes
Verify the specific suffix GE3 confirms lead-free and halogen-free compliance as stated in Vishay documentation. Confirm package designation matches PowerPAK SO-8SW requirements for your PCB layout. Ensure thermal management design accounts for the specified junction-to-case resistance values under actual operating conditions.
Single FETs, MOSFETs Selection Notes
Select this component when high current handling and low conduction losses are critical within a 40 V system. The PowerPAK SO-8SW package provides efficient thermal dissipation compared to standard surface mount options. Verify that the gate drive voltage meets the minimum threshold for optimal RDS(on) performance.
Single FETs, MOSFETs Part Context
This part belongs to the Vishay SQRS series of automotive MOSFETs designed for high-power density applications. It utilizes Siliconix manufacturing processes to achieve superior figure-of-merit characteristics. The series is engineered specifically for demanding environments requiring extended temperature operation and high reliability.
Single FETs, MOSFETs Replacement Considerations
Cross-reference with other SQRS series variants such as SQRS152ELP or SQRS160ELP if different voltage ratings or current capacities are required. Ensure any substitute maintains the same PowerPAK SO-8SW package dimensions and pinout configuration.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
