SQS423ENW-T1_GE3

Description：MOSFET P-CH 30V 16A PPAK 1212-8W
Series：TrenchFET®
Mfr：Vishay Siliconix
Package：Tape & Reel (TR)

SKU:f25b0dd5c963 Category: Single FETs, MOSFETs Brand: Vishay Siliconix

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

SQS423ENW-T1_GE3 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Vishay Siliconix. Its product description is MOSFET P-CH 30V 16A PPAK 1212-8W. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for SQS423ENW-T1_GE3

Description：MOSFET P-CH 30V 16A PPAK 1212-8W
Series：TrenchFET®
Mfr：Vishay Siliconix
Package：Tape & Reel (TR)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：16A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：21mOhm @ 12A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：26 nC @ 4.5 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：1975 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：62.5W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：PowerPAK® 1212-8W
Package / Case：PowerPAK® 1212-8W

Single FETs, MOSFETs datasheet and documents for SQS423ENW-T1_GE3

SQS423ENW-T1_GE3

Single FETs, MOSFETs Overview

The Vishay Siliconix SQS423ENW-T1_GE3 is a single-channel P-Channel MOSFET utilizing TrenchFET technology. It features a -30 V drain-source voltage and supports continuous drain currents of -16 A at both 25 °C and 125 °C case temperatures. The device offers a maximum on-state resistance of 0.021 Ω at VGS = -10 V and 0.060 Ω at VGS = -4.5 V. Packaged in a leadless PowerPAK 1212-8W, it operates within a junction temperature range of -55 °C to +175 °C and includes an integrated body diode with a pulsed current rating of -64 A.

Single FETs, MOSFETs Feature Summary

AEC-Q101 qualified for automotive reliability standards
TrenchFET power MOSFET architecture for optimized performance
100% tested for gate resistance and unclamped inductive switching

Single FETs, MOSFETs Applications

Automotive load switching applications
High-side power control circuits
Power distribution systems requiring high thermal stability

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix and package variant during procurement to ensure compatibility with design requirements. Confirm that the component meets all necessary automotive qualification standards required for the target application environment. Cross-reference datasheet specifications against actual operating conditions to validate performance margins.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring robust P-Channel switching with high current handling capabilities in compact footprints. Evaluate the thermal resistance characteristics relative to the PCB layout to ensure adequate heat dissipation. Consider the gate charge parameters when designing drive circuits to optimize switching speeds and minimize losses.

Single FETs, MOSFETs Part Context

This part belongs to the Vishay Siliconix SQS series of automotive-grade MOSFETs. It utilizes the PowerPAK 1212-8W package, which provides enhanced thermal performance compared to standard surface-mount packages. The series is designed to meet stringent automotive reliability requirements while maintaining low on-resistance for efficient power management.