SS9018HBU

Overview

The SS9018HBU is an NPN silicon RF bipolar junction transistor manufactured by onsemi. It operates with a collector-emitter voltage of 15 V and a continuous collector current of 50 mA. The device features a transition frequency of 1.1 GHz and a minimum DC current gain (hFE) of 97. Power dissipation is rated at 400 mW. It utilizes a TO-92 through-hole package and functions within a temperature range of -55°C to +150°C.

Feature Summary

• Designed for high-frequency radio frequency applications
• Provides enhanced signal amplification capabilities
• Utilizes standard through-hole mounting configuration

Applications

• RF amplifier circuits
• Signal switching operations
• Sensor interface circuits

Procurement Notes

Verify component authenticity through authorized channels due to discontinuation status. Confirm RoHS compliance documentation matches the specific manufacturing batch. Validate datasheet revisions against current engineering requirements before integration into final designs.

Selection Notes

Compare hFE minimum specifications against circuit gain requirements. Ensure thermal management strategies accommodate the 400 mW power dissipation limit. Verify that the 15 V collector-emitter rating exceeds maximum operational voltages in the target application environment.

Part Context

This component belongs to the SS9018 series of RF transistors. It shares functional similarities with variants such as the SS9018GBU, differing primarily in binning classifications for current gain parameters while maintaining identical electrical ratings and physical packaging dimensions.

Replacement Considerations

Publicly confirmed substitute part numbers include SS9018GBU and SS9018HBU_NL. Verify pinout compatibility and parameter tolerances before implementing any alternative components in existing designs.