SSD2025TF

$0.33

Description：MOSFET 2N-CH 60V 3.3A 8SOIC
Series：-

SKU:0963c0bf8806 Category: FET, MOSFET Arrays Brand: onsemi

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 60V 3.3A 8SOIC
Series：-
Mfr：onsemi
Package：Tape & Reel (TR)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual)
FET Feature：Logic Level Gate
Drain to Source Voltage (Vdss)：60V
Current - Continuous Drain (Id) @ 25°C：3.3A
Rds On (Max) @ Id, Vgs：100mOhm @ 3.3A, 10V
Vgs(th) (Max) @ Id：1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：30nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：-
Power - Max：2W
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-SOIC (0.154", 3.90mm Width)
Supplier Device Package：8-SOIC
Grade：-
Qualification：-

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SSD2025TF

Overview

The SSD2025 is a dual N-channel power MOSFET manufactured by onsemi, designed for efficient switching applications. It features a 60V drain-to-source voltage rating and a continuous drain current of 3.3A at 25°C ambient temperature. The device offers a low on-state resistance (RDS(on)) of 0.10Ω typical at VGS=10V and ID=3.3A. Packaged in an 8-pin SOIC format, it provides improved inductive ruggedness and fast switching times with low input capacitance.

Feature Summary

Dual N-Channel Configuration
Low On-State Resistance
Fast Switching Times
Improved Inductive Ruggedness

Applications

DC-DC Converters
Motor Control Circuits
Power Management Systems

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to ensure correct package type and tape/reel specifications. Confirm that the component meets all required environmental standards for your intended application before finalizing procurement.

Selection Notes

Select this component for applications requiring dual N-channel MOSFETs with moderate voltage ratings up to 60V. Ensure the thermal management design accounts for the junction-to-ambient thermal resistance of 62.5°C/W when operating at higher currents or elevated temperatures.

Part Context

This part belongs to onsemi's portfolio of discrete power semiconductors. It utilizes standard planar technology optimized for cost-effective mass production while maintaining reliable performance in general-purpose switching environments.

Replacement Considerations

Check for direct pin-compatible alternatives from other manufacturers offering similar RDS(on) and BVDSS specifications. Verify that any substitute maintains compatible gate charge characteristics to ensure equivalent switching performance.