SSF3365

$0.23

Description：MOSFET, P-CH, SINGLE, -3A, -30V,
Series：-
Mfr：Good-Ark Semiconductor
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:415f0aaaaf71 Category: Single FETs, MOSFETs Brand: Good-Ark Semiconductor

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Product introduction

SSF3365 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Good-Ark Semiconductor. Its product description is MOSFET, P-CH, SINGLE, -3A, -30V,. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for SSF3365

Description：MOSFET, P-CH, SINGLE, -3A, -30V,
Series：-
Mfr：Good-Ark Semiconductor
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：3A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：80mOhm @ 3A, 10V
Vgs(th) (Max) @ Id：1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：10 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：600 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：1.25W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：SOT-23
Package / Case：TO-236-3, SC-59, SOT-23-3

Single FETs, MOSFETs datasheet and documents for SSF3365

SSF3365

Single FETs, MOSFETs Overview

The SSF3365 is a 30V P-Channel MOSFET manufactured by Good-Ark Semiconductor. It utilizes advanced process technology to achieve high cell density and low on-resistance, making it suitable for high-efficiency switch mode power supplies. The device features a maximum drain-source voltage of -30V and a continuous drain current of -3A at steady-state conditions (TA=25°C). Its maximum on-resistance is specified as 85mΩ at VGS=-10V and ID=-3A. The component operates within a junction temperature range of -55°C to +150°C and is housed in an SOT-23 package.

Single FETs, MOSFETs Feature Summary

Advanced MOSFET process technology for high cell density
Low on-resistance combined with low gate charge
Fast switching capability and reverse body recovery

Single FETs, MOSFETs Applications

High efficiency switch mode power supplies
General purpose power management applications

Single FETs, MOSFETs Procurement Notes

Verify the specific datasheet revision number against the manufacturer's official documentation before finalizing procurement decisions. Confirm that the SOT-23 package dimensions and marking codes match the required design specifications. Ensure that thermal derating curves are reviewed for the intended operating environment to guarantee reliability under steady-state and pulsed load conditions.

Single FETs, MOSFETs Selection Notes

Select this component when designing circuits requiring a compact P-Channel MOSFET with a -30V rating. Consider the 85mΩ maximum on-resistance for conduction loss calculations. Evaluate the gate charge parameters to ensure compatibility with the driving circuitry for optimal switching performance. Verify that the thermal impedance characteristics meet the system's heat dissipation requirements.

Single FETs, MOSFETs Part Context

This component belongs to the category of discrete semiconductor devices, specifically power MOSFETs designed for voltage regulation and switching tasks. It serves as a key element in power conversion topologies where efficient control of current flow is necessary. The SOT-23 packaging allows for surface-mount integration into space-constrained printed circuit boards.