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Product Detailed Parameters
- Description：MOSFET N/P-CH 20V 0.8A SOT563
- Series：-
- Mfr：Good-Ark Semiconductor
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：N and P-Channel
- FET Feature：-
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：800mA (Tc), 400mA (Tc)
- Rds On (Max) @ Id, Vgs：300mOhm @ 500mA, 4.5V, 600mOhm @ 300mA, 4.5V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：2nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：75pF @ 10V, 78pF @ 10V
- Power - Max：312mW (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SOT-563, SOT-666
- Supplier Device Package：SOT-563
- Grade：-
- Qualification：-
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Overview
The SSF7120 is a complementary N-channel and P-channel MOSFET pair housed in an SOT-563 package. The N-channel device offers a drain-source voltage of 20V, continuous drain current of 800mA, and on-resistance of 300mΩ. The P-channel counterpart provides a drain-source voltage of -20V, continuous drain current of -400mA, and on-resistance of 800mΩ. Both channels operate within a junction temperature range of -55°C to +150°C.
Feature Summary
- Complementary N-channel and P-channel configuration for efficient switching applications
- Low on-resistance combined with low gate charge for high efficiency
- Fast switching and reverse body recovery capabilities
- Advanced MOSFET process technology ensuring reliability
Applications
- Notebook computers
- Load switch circuits
- Networking equipment
- Hand-held devices
Procurement Notes
Verify the specific lot marking code as it varies by production batch. Confirm the carrier reel quantity matches project requirements. Ensure the SOT-563 package dimensions align with PCB layout constraints. Check RoHS compliance status if required by local regulations. Validate electrical parameters against the latest datasheet revision.
Selection Notes
Select this component for space-constrained designs requiring both N-channel and P-channel functionality. The low on-resistance supports efficient power management in portable electronics. Consider the thermal resistance when designing heat dissipation strategies. Ensure gate drive voltages remain within the specified limits for optimal performance.
Part Context
This dual MOSFET integrates two distinct channel types into a single compact footprint. It serves as a solution for differential signaling and load switching in mobile and computing hardware. The design prioritizes miniaturization without sacrificing switching speed or thermal stability.
Replacement Considerations
No public confirmed substitute part numbers are available in the provided documentation.
FAQ
What is the maximum continuous drain current for the N-channel?
The maximum continuous drain current for the N-channel is 800mA at a case temperature of 25°C.
Does the SSF7120 support fast switching applications?
Yes, the device features fast switching and reverse body recovery characteristics suitable for high-frequency operations.
What is the operating junction temperature range?
The operating junction temperature range extends from -55°C to +150°C.
