SSFB12N05

$0.41

Description：MOSFET N/P-CH 12V 5A 6DFN
Series：-

SKU:bd3a8cd4bcc0 Category: FET, MOSFET Arrays Brand: Good-Ark Semiconductor

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Product introduction

Product Detailed Parameters

Description：MOSFET N/P-CH 12V 5A 6DFN
Series：-
Mfr：Good-Ark Semiconductor
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：N and P-Channel Complementary
FET Feature：-
Drain to Source Voltage (Vdss)：12V
Current - Continuous Drain (Id) @ 25°C：5A (Ta)
Rds On (Max) @ Id, Vgs：32mOhm @ 5A, 4.5V, 74mOhm @ 4.5A, 4.5V
Vgs(th) (Max) @ Id：1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：6.6nC @ 4.5V, 9.2nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds：495pF @ 6V, 520pF @ 6V
Power - Max：1.9W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：6-WDFN Exposed Pad
Supplier Device Package：6-DFN (2x2)
Grade：-
Qualification：-

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SSFB12N05

Overview

The SSFB12N05 is a complementary N-channel and P-channel MOSFET in a DFN2x2-6L 2EP package. The N-channel device offers a drain-source voltage of 12V, continuous current of 5A at 25°C, and maximum on-resistance of 32mΩ at VGS=4.5V. The P-channel counterpart provides -12V breakdown, -5A continuous current, and 74mΩ maximum on-resistance at VGS=-4.5V. Both channels support a junction temperature range of -55 to +150°C.

Feature Summary

Complementary N-channel and P-channel configuration within a single compact package
Advanced MOSFET process technology for high cell density and low on-resistance
Fast switching performance with reverse body recovery characteristics
Low gate charge combined with low on-resistance for high efficiency

Applications

High efficiency switched mode power supplies
DC-DC converters
Power management circuits

Procurement Notes

Verify the specific ordering code against the manufacturer's official documentation to ensure correct component revision. Confirm that the DFN2x2-6L 2EP footprint matches your PCB layout requirements. Check for any RoHS or REACH compliance statements in the latest datasheet version before finalizing procurement specifications.

Selection Notes

Select this component when space-constrained designs require both N-channel and P-channel switching capabilities. The low thermal resistance and small outline make it suitable for applications where heat dissipation is limited by board area. Ensure gate drive voltages align with the specified thresholds for optimal RDS(on) performance.

Part Context

This dual MOSFET integrates separate N-channel and P-channel structures into one unit. It utilizes advanced processing techniques to achieve high cell density. The design focuses on minimizing on-resistance while maintaining fast switching speeds. This integration reduces component count compared to using discrete devices.