SSFK9120

$0.33

Description：MOSFET N/P-CH 20V 0.8A SOT363
Series：-

SKU:d67b97f137bd Category: FET, MOSFET Arrays Brand: Good-Ark Semiconductor

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Product introduction

Product Detailed Parameters

Description：MOSFET N/P-CH 20V 0.8A SOT363
Series：-
Mfr：Good-Ark Semiconductor
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：N and P-Channel Complementary
FET Feature：-
Drain to Source Voltage (Vdss)：20V
Current - Continuous Drain (Id) @ 25°C：800mA (Tc), 400mA (Tc)
Rds On (Max) @ Id, Vgs：300mOhm @ 500mA, 4.5V, 600mOhm @ 300mA, 4.5V
Vgs(th) (Max) @ Id：1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：2nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds：75pF @ 10V, 78pF @ 10V
Power - Max：275mW (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：6-TSSOP, SC-88, SOT-363
Supplier Device Package：SOT-363
Grade：-
Qualification：-

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SSFK9120

Overview

The SSFK9120 is a complementary N-channel and P-channel MOSFET in an SOT-363 package. The N-channel device features a drain-source voltage of 20V, continuous drain current of 800mA at 25°C, and on-resistance of 300mΩ at VGS=4.5V. The P-channel counterpart offers a drain-source voltage of -20V, continuous drain current of -400mA at 25°C, and on-resistance of 600mΩ at VGS=-4.5V. Both channels operate within a junction temperature range of -55°C to +150°C.

Feature Summary

Complementary N-channel and P-channel configuration in a single compact package
Advanced MOSFET process technology for high cell density and low on-resistance
Fast switching and reverse body recovery characteristics
Low gate charge supporting efficient operation in switch mode power supplies

Applications

Notebook computers
Load switches
Networking equipment
Hand-held devices

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to confirm packaging details such as tape and reel quantities or tray configurations. Ensure that the requested component matches the exact SSFK9120 designation to guarantee compatibility with the specified electrical parameters and thermal ratings provided in the datasheet.

Selection Notes

Select this component for applications requiring a dual-channel solution in a minimal footprint. The low on-resistance values support efficient power management in portable electronics. Verify that the required current handling capabilities align with the 800mA N-channel and -400mA P-channel limits under the intended operating thermal conditions.

Part Context

This part belongs to the category of complementary MOSFETs designed for space-constrained environments. It integrates both N-type and P-type transistors into one assembly, simplifying circuit board layout and reducing component count compared to using separate discrete devices for similar functions.