SSM3J09FU,LF

$0.36

Description：MOSFET P-CH 30V 200MA USM
Series：-
Mfr：Toshiba Semiconductor and Storage
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:cc8e5e94bb9c Category: Single FETs, MOSFETs Brand: Toshiba Semiconductor and Storage

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Product introduction

SSM3J09FU,LF is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Toshiba Semiconductor and Storage. Its product description is MOSFET P-CH 30V 200MA USM. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for SSM3J09FU,LF

Description：MOSFET P-CH 30V 200MA USM
Series：-
Mfr：Toshiba Semiconductor and Storage
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：200mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)：3.3V, 10V
Rds On (Max) @ Id, Vgs：2.7Ohm @ 100mA, 10V
Vgs(th) (Max) @ Id：1.8V @ 100µA
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：22 pF @ 5 V
FET Feature：-
Power Dissipation (Max)：150mW (Ta)
Operating Temperature：150°C
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：USM
Package / Case：SC-70, SOT-323

Single FETs, MOSFETs datasheet and documents for SSM3J09FU,LF

SSM3J09FU,LF

Single FETs, MOSFETs Overview

The SSM3J09FU,LF is a silicon P-channel MOSFET management switch designed for high-speed switching applications. It features a compact SC-70 package with a maximum drain-source voltage of -30 V and a continuous drain current of -200 mA at 25°C. The device offers low on-resistance, specified as 2.7 Ω max at VGS = -10 V and 4.2 Ω max at VGS = -4 V. Key electrical characteristics include a gate threshold voltage range of -1.1 V to -1.8 V, input capacitance of 22 pF, and turn-on/turn-off times of 85 ns. Power dissipation is rated at 150 mW.

Single FETs, MOSFETs Feature Summary

Compact SC-70 surface-mount package suitable for space-constrained designs
Low on-resistance optimized for efficient power management switching
High-speed switching capability with defined turn-on and turn-off times
Enhanced electrostatic discharge handling precautions required during manual operation

Single FETs, MOSFETs Applications

Management switches in portable electronic devices
High-speed switching circuits requiring small form factors
Power control sections in battery-operated equipment

Single FETs, MOSFETs Procurement Notes

Verify the component authenticity by checking the marking code '2E1E' against the datasheet specifications. Ensure that the ordering suffix matches the requested packaging configuration, as standard availability may vary. Confirm compliance with environmental directives such as RoHS before finalizing procurement orders.

Single FETs, MOSFETs Selection Notes

Select this component when a small footprint and moderate current handling are required for P-channel switching. Evaluate the on-resistance requirements against the available gate drive voltages, as resistance increases significantly below -4 V. Consider the thermal derating curves if operating near the maximum temperature limits.

Single FETs, MOSFETs Part Context

This part belongs to Toshiba's U-MOS series of field effect transistors, specifically engineered for power management applications. The SSM3J09FU utilizes silicon technology to provide reliable performance in single-channel configurations. It is distinct from higher-current variants within the same family due to its specific current and resistance ratings.