SSM3J130TU,LF

$0.55

Description：MOSFET P-CH 20V 4.4A UFM
Series：U-MOSVI
Mfr：Toshiba Semiconductor and Storage
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:917ba5b2fce6 Category: Single FETs, MOSFETs Brand: Toshiba Semiconductor and Storage

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Product introduction

SSM3J130TU,LF is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Toshiba Semiconductor and Storage. Its product description is MOSFET P-CH 20V 4.4A UFM. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for SSM3J130TU,LF

Description：MOSFET P-CH 20V 4.4A UFM
Series：U-MOSVI
Mfr：Toshiba Semiconductor and Storage
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：20 V
Current - Continuous Drain (Id) @ 25°C：4.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：1.5V, 4.5V
Rds On (Max) @ Id, Vgs：25.8mOhm @ 4A, 4.5V
Vgs(th) (Max) @ Id：1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：24.8 nC @ 4.5 V
Vgs (Max)：±8V
Input Capacitance (Ciss) (Max) @ Vds：1800 pF @ 10 V
FET Feature：-
Power Dissipation (Max)：500mW (Ta)
Operating Temperature：150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：UFM
Package / Case：3-SMD, Flat Leads

Single FETs, MOSFETs datasheet and documents for SSM3J130TU,LF

SSM3J130TU,LF

Single FETs, MOSFETs Overview

The SSM3J130TU,LF is a single P-channel enhancement-mode MOSFET manufactured by Toshiba Semiconductor and Storage. It utilizes U-MOSVI technology within a compact UFM-3 surface-mount package. The device features a drain-source breakdown voltage of 20 V and supports a continuous drain current of 4.4 A at 25°C. Key electrical characteristics include a maximum on-resistance of 500 mΩ and a gate charge of 24.8 nC. It operates reliably across a temperature range from -55°C to +150°C junction temperature with a power dissipation rating of 500 mW.

Single FETs, MOSFETs Feature Summary

Utilizes U-MOSVI silicon technology for enhanced performance in small-signal applications.
Designed for surface-mount installation using the compact UFM-3 three-terminal package.
Features low gate charge and threshold voltage to facilitate efficient driver interface.

Single FETs, MOSFETs Applications

DC-DC converter output switching stages
Low-side load switch implementations
Battery protection circuits

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix LF against the manufacturer's datasheet to confirm lead-free compliance status. Ensure the ordering part number matches the exact voltage and current ratings required for the target circuit design. Cross-reference the UFM-3 package dimensions with PCB footprint libraries to prevent assembly errors during manufacturing.

Single FETs, MOSFETs Selection Notes

Select this component when a low-voltage P-channel switch is required for space-constrained designs. The UFM-3 package offers a smaller footprint compared to standard SOT packages while maintaining adequate thermal handling for moderate currents. Consider the 20V rating for systems operating below this threshold to ensure sufficient safety margins.

Single FETs, MOSFETs Part Context

This component belongs to the SSM3J series of single P-channel MOSFETs produced by Toshiba. The series focuses on providing high-density solutions for portable electronics and automotive modules. The U-MOSVI generation represents an evolution in trench gate technology aimed at reducing on-resistance without increasing package size.