Single FETs, MOSFETs SSM3K345R,LF product image

SSM3K345R,LF

$0.30
  • Description:MOSFET N-CHANNEL 20V 4A SOT23F
  • Series:U-MOSVI
  • Mfr:Toshiba Semiconductor and Storage
  • Package:Tape & Reel (TR),Cut Tape (CT)

SKU:3119e1cbe090 Category: Brand:

  
  • Quantity
    • -
    • +
  •    
ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

SSM3K345R,LF is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Toshiba Semiconductor and Storage. Its product description is MOSFET N-CHANNEL 20V 4A SOT23F. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for SSM3K345R,LF

  • Description:MOSFET N-CHANNEL 20V 4A SOT23F
  • Series:U-MOSVI
  • Mfr:Toshiba Semiconductor and Storage
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):20 V
  • Current - Continuous Drain (Id) @ 25°C:4A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On):1.5V, 4.5V
  • Rds On (Max) @ Id, Vgs:33mOhm @ 4A, 4.5V
  • Vgs(th) (Max) @ Id:1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs:3.6 nC @ 4.5 V
  • Vgs (Max):±8V
  • Input Capacitance (Ciss) (Max) @ Vds:410 pF @ 10 V
  • FET Feature:-
  • Power Dissipation (Max):1W (Ta)
  • Operating Temperature:150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Supplier Device Package:SOT-23F
  • Package / Case:SOT-23-3 Flat Leads

Single FETs, MOSFETs datasheet and documents for SSM3K345R,LF

SSM3K345R,LF

Single FETs, MOSFETs Overview

The SSM3K345R,LF is a single N-channel enhancement mode MOSFET manufactured by Toshiba Semiconductor and Storage. It utilizes U-MOSVI technology and is housed in an SOT-23F surface-mount package. The device features a drain-source breakdown voltage (Vdss) of 20 V and supports a continuous drain current (Id) of 4 A at 25°C ambient temperature. Key electrical characteristics include a maximum gate-source voltage (Vgs) of ±8 V, a gate charge (Qg) of 3.6 nC at 4.5 V, and an input capacitance (Ciss) of 410 pF at 10 V. The component operates within a junction temperature range up to 150°C with a power dissipation rating of 1 W.

Single FETs, MOSFETs Feature Summary

  • Utilizes U-MOSVI silicon technology for efficient switching performance
  • Designed for surface-mount assembly in compact SOT-23F packages
  • Supports high continuous current handling capabilities

Single FETs, MOSFETs Applications

  • DC-DC converter circuits
  • Power management switch applications
  • Motor driver interfaces

Single FETs, MOSFETs Procurement Notes

Verify the specific manufacturer part number against official Toshiba Semiconductor and Storage documentation to confirm technical specifications. Ensure that the ordering suffix matches the required packaging format, such as cut tape or reel, as indicated in authorized distributor catalogs. Cross-reference the RoHS compliance status and automotive qualification requirements if applicable to your design constraints before finalizing procurement.

Single FETs, MOSFETs Selection Notes

Select this component when a low-voltage N-channel MOSFET with moderate current capacity is required for space-constrained designs. The SOT-23F package offers a compact footprint suitable for dense PCB layouts. Consider the 20 V rating and 4 A current limit to ensure adequate headroom for the target application's voltage and load requirements while maintaining thermal stability within the specified operating temperature range.

Single FETs, MOSFETs Part Context

This component belongs to the SSM3K series of small signal and power MOSFETs produced by Toshiba. The series leverages advanced U-MOSVI process technology to achieve optimized on-resistance and switching speeds. These devices are engineered for general-purpose switching applications where reliability and efficiency are prioritized in standard surface-mount configurations.

Single FETs, MOSFETs Replacement Considerations

Consult official Toshiba substitution guides for verified equivalents. No direct public substitute part numbers are confirmed in the available data.

SSM3K345R,LFSSM3K345R,LF
$0.30
Buy Now