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SSM6J502NU,LF is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Toshiba Semiconductor and Storage. Its product description is MOSFET P-CH 20V 6A 6UDFNB. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for SSM6J502NU,LF
- Description：MOSFET P-CH 20V 6A 6UDFNB
- Series：U-MOSVI
- Mfr：Toshiba Semiconductor and Storage
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：20 V
- Current - Continuous Drain (Id) @ 25°C：6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：1.5V, 4.5V
- Rds On (Max) @ Id, Vgs：23.1mOhm @ 4A, 4.5V
- Vgs(th) (Max) @ Id：1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：24.8 nC @ 4.5 V
- Vgs (Max)：±8V
- Input Capacitance (Ciss) (Max) @ Vds：1800 pF @ 10 V
- FET Feature：-
- Power Dissipation (Max)：1W (Ta)
- Operating Temperature：150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：6-UDFNB (2x2)
- Package / Case：6-WDFN Exposed Pad
Single FETs, MOSFETs datasheet and documents for SSM6J502NU,LF
Single FETs, MOSFETs Overview
The SSM6J502NU,LF is a single P-channel enhancement mode MOSFET manufactured by Toshiba Semiconductor and Storage. It utilizes U-MOSVI technology in a compact 6-UDFNB (2x2) surface-mount package. Key electrical specifications include a drain-source breakdown voltage of 20 V and a continuous drain current of 6 A at ambient temperature. The device features a maximum on-resistance of 23.1 mOhms at a gate-source voltage of 4.5 V, with a corresponding gate charge of 24.8 nC. It operates within a temperature range of -55°C to +150°C and supports a power dissipation of 1 W.
Single FETs, MOSFETs Feature Summary
- Single P-channel configuration utilizing U-MOSVI silicon technology for enhanced performance
- Compact 6-UDFNB surface-mount package designed for space-constrained applications
- Low on-resistance characteristics optimized for efficient power management
Single FETs, MOSFETs Applications
- Power management circuits requiring low-side switching
- Battery protection systems
- DC-DC converter output stages
Single FETs, MOSFETs Procurement Notes
Verify the specific ordering suffix and tape/reel specifications against the official Toshiba datasheet before procurement. Confirm that the component meets RoHS compliance requirements for your target market. Ensure the supplier provides valid traceability documentation matching the manufacturer's part number format.
Single FETs, MOSFETs Selection Notes
Select this component when a 20 V P-channel switch with 6 A capacity is required in a minimal footprint. Compare the 23.1 mOhm on-resistance against system thermal constraints. Consider the 6-UDFNB package dimensions for PCB layout compatibility relative to alternative packages like UDFN-6.
Single FETs, MOSFETs Part Context
This part belongs to the SSM6J502 series from Toshiba, which focuses on low-voltage power management solutions. It shares the U-MOSVI technology platform with related models such as the SSM6J501 and SSM6J503, offering variations in current handling and resistance profiles within the same physical package family.
Single FETs, MOSFETs Replacement Considerations
Direct substitutes within the same series include the SSM6J501NU,LF and SSM6J503NU,LF. Verify pinout compatibility and ensure the replacement meets the specific 20 V and 6 A requirements of the original design.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
