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Product Detailed Parameters
- Description：MOSFET N/P-CH 30V/20V 0.5A UF6
- Series：-
- Mfr：Toshiba Semiconductor and Storage
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：N and P-Channel
- FET Feature：-
- Drain to Source Voltage (Vdss)：30V, 20V
- Current - Continuous Drain (Id) @ 25°C：500mA (Ta)
- Rds On (Max) @ Id, Vgs：145mOhm @ 500mA, 4.5V, 260mOhm @ 250mA, 4V
- Vgs(th) (Max) @ Id：1.1V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs：-
- Input Capacitance (Ciss) (Max) @ Vds：245pF @ 10V, 218pF @ 10V
- Power - Max：500mW
- Operating Temperature：150°C
- Mounting Type：Surface Mount
- Package / Case：6-SMD, Flat Leads
- Supplier Device Package：UF6
- Grade：-
- Qualification：-
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Overview
The SSM6L12TU,LF is a dual-channel silicon MOSFET from Toshiba's U-MOSIII series, featuring one N-channel and one P-channel transistor in a UF-6 package. The N-channel Q1 provides a drain-source breakdown voltage of 30 V with a maximum on-resistance of 180 mΩ at VGS = 2.5 V. The P-channel Q2 offers a breakdown voltage of -20 V and a maximum on-resistance of 430 mΩ at VGS = -2.5 V. Both channels support a continuous drain current of ±0.5 A and operate within an ambient temperature range of -55°C to +150°C.
Feature Summary
- Optimized for high-density mounting in small packages
- Features low ON-resistance for efficient switching
- Suitable for high-speed switching applications
Applications
- High-speed switching circuits
- General electronics applications
- Computers and personal equipment
- Office equipment and measuring instruments
Procurement Notes
Verify the component against official Toshiba datasheets to confirm pinout alignment and electrical ratings match your design requirements. Ensure that thermal management strategies account for the specified power dissipation limits on standard FR4 boards. Confirm compliance with relevant environmental directives such as RoHS before finalizing procurement specifications.
Selection Notes
Select this component when space constraints require a dual-channel configuration in a compact UF-6 footprint. It is appropriate for designs needing matched N/P channel pairs with distinct voltage ratings of 30 V and -20 V. Consider the specific gate threshold voltages and on-resistance values at your operating gate drive levels to ensure proper switching performance.
Part Context
This device belongs to Toshiba's U-MOSIII family of silicon MOSFETs designed for general-purpose switching. The SSM6L12TU integrates complementary N-channel and P-channel transistors into a single package, facilitating simplified circuit layouts for bridge drivers or logic-level interfaces while maintaining low profile and weight characteristics.
Replacement Considerations
Consult Toshiba documentation for direct equivalents within the SSM6L series. Verify that any substitute maintains compatible UF-6 packaging, voltage ratings, and thermal characteristics to ensure seamless integration without redesigning the PCB layout or cooling infrastructure.
FAQ
What are the absolute maximum drain-source voltage ratings for each channel?
The N-channel (Q1) has a maximum rating of 30 V, while the P-channel (Q2) has a maximum rating of -20 V.
How does the on-resistance vary with gate-source voltage?
For Q1, RDS(ON) is maximized at 180 mΩ when VGS is 2.5 V, and for Q2, it is maximized at 430 mΩ when VGS is -2.5 V.
Is this component suitable for automotive safety-critical systems?
No, the datasheet explicitly restricts use in unintended applications like automotive safety devices unless specifically permitted.
