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Product Detailed Parameters
- Description：MOSFET 2N-CH 20V 0.1A US6
- Series：-
- Mfr：Toshiba Semiconductor and Storage
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：100mA
- Rds On (Max) @ Id, Vgs：3Ohm @ 10mA, 4V
- Vgs(th) (Max) @ Id：1.1V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs：-
- Input Capacitance (Ciss) (Max) @ Vds：9.3pF @ 3V
- Power - Max：200mW
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：6-TSSOP, SC-88, SOT-363
- Supplier Device Package：US6
- Grade：-
- Qualification：-
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Overview
The SSM6N16FU is a dual N-channel silicon MOSFET designed for high-speed switching and analog applications. It features a compact SC-70-6 (SOT-363) package suitable for high-density mounting. The device provides a drain-source breakdown voltage of 20 V and a continuous drain current of 100 mA. On-resistance values are specified as 3.0 Ω max at VGS = 4 V, 4.0 Ω max at VGS = 2.5 V, and 15 Ω max at VGS = 1.5 V. Gate-source voltage ratings are ±10 V, with a maximum power dissipation of 200 mW.
Feature Summary
- Dual N-channel configuration in a compact surface-mount package
- Low on-resistance optimized for low gate drive voltages
- Capable of fast switching speeds for signal processing
Applications
- High-speed switching circuits
- Analog signal switching
- Power management systems
Procurement Notes
Verify the specific ordering suffix TE85LF against official Toshiba documentation to confirm packaging details such as reel specifications or tape-and-reel dimensions. Confirm RoHS compliance status directly with the manufacturer or authorized distributors before procurement. Ensure that the component's absolute maximum ratings are respected during design to maintain reliability standards.
Selection Notes
Select this component when a dual N-channel MOSFET is required for low-voltage logic interfaces. The device supports operation with gate drive voltages as low as 1.5 V, making it compatible with modern microcontrollers. Evaluate thermal derating requirements based on the 200 mW total power dissipation limit and ambient temperature conditions.
Part Context
This part belongs to the Toshiba SSM6N series of small-signal MOSFETs. These devices are engineered for consumer electronics and portable equipment where space constraints and low power consumption are critical. The dual configuration allows for efficient implementation of bridge circuits or differential signaling paths within minimal board area.
Replacement Considerations
Consult Toshiba's official cross-reference documentation for verified equivalent parts. Do not substitute with generic alternatives without verifying pinout compatibility, electrical parameters, and package dimensions.
