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Product Detailed Parameters
- Description：MOSFET 2N-CH 20V 0.25A US6
- Series：-
- Mfr：Toshiba Semiconductor and Storage
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：250mA (Ta)
- Rds On (Max) @ Id, Vgs：1.1Ohm @ 150mA, 4.5V
- Vgs(th) (Max) @ Id：1V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs：0.34nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：36pF @ 10V
- Power - Max：285mW (Ta)
- Operating Temperature：150°C
- Mounting Type：Surface Mount
- Package / Case：6-TSSOP, SC-88, SOT-363
- Supplier Device Package：US6
- Grade：-
- Qualification：-
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Overview
The SSM6N35AFU,LF is a dual N-channel silicon MOSFET in a US6 (SOT-363) package. It supports 1.2 V drive with low on-resistance: 9.0 Ω max at VGS=1.2 V/ID=10 mA; 3.1 Ω max at VGS=1.5 V/ID=20 mA; 2.4 Ω max at VGS=1.8 V/ID=150 mA; 1.6 Ω max at VGS=2.5 V/ID=150 mA; and 1.1 Ω max at VGS=4.5 V/ID=150 mA. Drain-source voltage is 20 V, continuous drain current is 250 mA, and power dissipation is 285 mW. Threshold voltage ranges from 0.35 V to 1.0 V. Operating temperature spans -55 °C to +150 °C.
Feature Summary
- Supports 1.2 V logic-level gate drive for low-voltage applications
- Provides low drain-source on-resistance across multiple gate voltage levels
- Integrates two independent N-channel MOSFETs in a compact surface-mount package
Applications
- High-speed switching circuits
- Analog switch implementations
Procurement Notes
Verify the complete part number including the LF suffix against official Toshiba documentation to confirm lead-free compliance and specific manufacturing revision. Confirm that the US6 package dimensions match the target PCB footprint requirements before finalizing procurement orders.
Selection Notes
Select this component when designs require dual N-channel MOSFETs operating at low gate voltages such as 1.2 V or 1.5 V. Ensure the application current remains within the 250 mA continuous limit and that thermal management accommodates the 285 mW power dissipation rating in the specified environment.
Part Context
This device belongs to the SSM6N35 series of small-signal MOSFETs manufactured by Toshiba Semiconductor and Storage. The series focuses on low-voltage drive compatibility and compact packaging solutions suitable for portable electronics and space-constrained circuit designs requiring dual channel configurations.
Replacement Considerations
Consult official Toshiba substitution guides for verified alternatives. Cross-referencing requires matching the US6 package, 20 V breakdown voltage, and comparable on-resistance characteristics at equivalent gate drive conditions.
