SSM6N44FU,LF

Overview

The SSM6N44FU,LF is a dual N-channel silicon MOSFET in a US-6 (SOT-363) package. It features a drain-source breakdown voltage of 30 V and a continuous drain current of 100 mA. The maximum drain-source on-resistance is 4.0 Ω at VGS = 4 V and 7.0 Ω at VGS = 2.5 V. Gate-source voltage limits are ±20 V, with a threshold voltage range of 0.8 V to 1.5 V. Power dissipation is rated at 200 mW, operating from -55°C to +150°C.

Feature Summary

• Dual N-channel configuration within a compact surface-mount package for high-density mounting.
• Optimized for high-speed switching applications with low input capacitance.
• Low on-resistance characteristics suitable for analog switching operations.

Applications

• High-speed switching circuits
• Analog switching applications

Procurement Notes

Verify the component marking 'TOSHIBA 2-2J1C' against the datasheet to confirm authenticity. Ensure the ordering suffix matches the specific packaging requirements. Confirm RoHS compliance status directly with the manufacturer or authorized distributor before procurement.

Selection Notes

Select this component when a dual N-channel MOSFET is required in a small footprint. Verify that the 30 V drain-source voltage and 100 mA current ratings meet the circuit demands. Check that the gate drive voltage aligns with the specified on-resistance thresholds for optimal performance.

Part Context

This device belongs to Toshiba's series of small-signal field effect transistors. It utilizes silicon technology and is designed for general-purpose switching tasks where space constraints necessitate a dual-transistor solution in a single package.

Replacement Considerations

SSM6N44FU,LF serves as an alternative to SSM6N44FE,LM. Both are dual N-channel MOSFETs with similar electrical specifications, though they utilize different package types: ES6-6 versus US-6.