SSM6N57NU,LF

Overview

The SSM6N57NU,LF is a dual N-channel MOSFET array in a 6-UDFN(2x2) package. It features a 30V drain-source voltage and 4A continuous drain current. The device supports logic-level gate drive with a 1.8V minimum threshold. Key electrical parameters include an on-resistance of 84mΩ at 4.5V and 2A, input capacitance of 129pF at 15V, and gate charge of 1.8nC at 4.5V. Maximum power dissipation is 1W, with a junction temperature rating of 150°C.

Feature Summary

• Dual N-channel configuration for compact circuit design
• Logic-level gate operation compatible with 1.8V drive signals
• Low on-resistance optimized for efficient power switching

Applications

• Smartphone charging circuits
• Power management switches
• DC-DC converter output stages

Procurement Notes

Verify the specific ordering suffix to ensure compliance with RoHS3 standards and lead-free requirements. Confirm the moisture sensitivity level (MSL 1) and storage conditions prior to assembly. Ensure the supplier provides official Toshiba Semiconductor and Storage documentation to validate part authenticity and traceability.

Selection Notes

Select this component for applications requiring low-voltage logic interface and high current density in small footprints. Compare on-resistance values against system efficiency targets. Verify that the 1.8V drive capability matches the host controller's output levels. Consider thermal dissipation limits within the UDFN6 package for the intended load profile.

Part Context

This part belongs to Toshiba’s series of N-channel MOSFET arrays designed for portable electronics. It utilizes the UDFN6 surface-mount package to minimize board space. The device integrates two independent channels within a single encapsulation, serving as a building block for multi-rail power distribution systems.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Consult official Toshiba cross-reference guides for verified alternatives.