SSM6N7002CFU,LF

Overview

The SSM6N7002CFU,LF is a dual N-channel enhancement-mode MOSFET manufactured by Toshiba Semiconductor and Storage. It features a US6 surface-mount package with six pins. The device supports a drain-source voltage of 60 V and a continuous drain current of 170 mA at 25°C. Typical on-resistance values are 2.8 Ω at VGS = 10 V, 3.1 Ω at VGS = 5 V, and 3.2 Ω at VGS = 4.5 V, all measured at ID = 100 mA. Total gate charge is typically 0.27 nC at VDS = 30 V and VGS = 4.5 V. Power dissipation is rated at 285 mW, with an operating temperature range from -55°C to +150°C.

Feature Summary

• Integrated gate-source diode for protection
• Low drain-source on-resistance across various gate voltages
• High-speed switching capability

Applications

• High-Speed Switching

Procurement Notes

Verify the component against the official Toshiba datasheet specifications before integration. Confirm that the US6 package dimensions and pin assignments match the design requirements. Ensure electrostatic discharge precautions are followed during handling and assembly to prevent damage to the sensitive internal structures.

Selection Notes

Select this component for applications requiring dual N-channel MOSFETs in a compact US6 package. Consider the low on-resistance characteristics for efficient power management in small-signal switching circuits. Evaluate thermal performance based on the 285 mW power dissipation rating and the specific PCB layout constraints.

Part Context

This part belongs to the Toshiba Silicon N-Channel MOSFET series designed for high-speed switching applications. It utilizes a US6 surface-mount package to provide a compact footprint suitable for dense circuit board layouts. The dual configuration allows for independent control of two channels within a single component.

Replacement Considerations

No public confirmed substitute part numbers are available in the provided documentation.