Single FETs, MOSFETs SSM6P16FE(TE85L,F) product image

SSM6P16FE(TE85L,F)

$0.40
  • Description:MOSFET P-CH 20V 0.1A ES6
  • Series:-
  • Mfr:Toshiba Semiconductor and Storage
  • Package:Cut Tape (CT)

SKU:30db7ec603b6 Category: Brand:

  
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SSM6P16FE(TE85L,F) is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Toshiba Semiconductor and Storage. Its product description is MOSFET P-CH 20V 0.1A ES6. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for SSM6P16FE(TE85L,F)

  • Description:MOSFET P-CH 20V 0.1A ES6
  • Series:-
  • Mfr:Toshiba Semiconductor and Storage
  • Package:Cut Tape (CT)
  • FET Type:P-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):20 V
  • Current - Continuous Drain (Id) @ 25°C:100mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On):-
  • Rds On (Max) @ Id, Vgs:8Ohm @ 10mA, 4V
  • Vgs(th) (Max) @ Id:-
  • Gate Charge (Qg) (Max) @ Vgs:-
  • Vgs (Max):-
  • Input Capacitance (Ciss) (Max) @ Vds:11 pF @ 3 V
  • FET Feature:-
  • Power Dissipation (Max):150mW (Ta)
  • Operating Temperature:150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Supplier Device Package:ES6
  • Package / Case:SOT-563, SOT-666

Single FETs, MOSFETs datasheet and documents for SSM6P16FE(TE85L,F)

SSM6P16FE(TE85L,F)

Single FETs, MOSFETs Overview

The SSM6P16FE(TE85L,F) is a P-Channel MOSFET manufactured by Toshiba Semiconductor and Storage. It features a drain-source breakdown voltage (Vdss) of 20 V and a continuous drain current (Id) of 100 mA at 25 °C. The device utilizes the U-MOS VI technology platform and is housed in an SOT-563 surface-mount package. This component is designed for signal switching applications requiring low power consumption and compact form factors.

Single FETs, MOSFETs Feature Summary

  • Utilizes Toshiba's U-MOS VI technology for enhanced performance
  • Integrated P-Channel configuration in a dual-channel compatible package
  • Designed for low-power signal switching applications

Single FETs, MOSFETs Applications

  • Signal switching circuits
  • Low-power electronic devices
  • Portable equipment power management

Single FETs, MOSFETs Procurement Notes

Verify the specific manufacturer designation as Toshiba Semiconductor and Storage when sourcing. Confirm the package type matches the required SOT-563 footprint for PCB layout compatibility. Ensure the part number suffix corresponds to the intended tape and reel configuration for automated assembly processes.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring a 20 V P-Channel switch with 100 mA current handling. The SOT-563 package offers space efficiency for dense layouts. Consider the thermal dissipation limits inherent to small signal packages when determining circuit load requirements.

Single FETs, MOSFETs Part Context

This part belongs to Toshiba's U-MOS VI series, which focuses on improving switching characteristics and reducing gate charge for modern portable electronics. The SSM6P16FE integrates P-Channel functionality within a standard dual-package outline, allowing designers to utilize available board space effectively while maintaining reliable switching performance.

Single FETs, MOSFETs FAQ

What is the maximum drain-source voltage rating?

The maximum drain-source breakdown voltage (Vdss) is rated at 20 V.

What technology platform does this MOSFET use?

It utilizes Toshiba's U-MOS VI technology.

SSM6P16FE(TE85L,F)SSM6P16FE(TE85L,F)
$0.40
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