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SSM6P16FE(TE85L,F) is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Toshiba Semiconductor and Storage. Its product description is MOSFET P-CH 20V 0.1A ES6. Review the specifications below when checking this part for your BOM.
The SSM6P16FE(TE85L,F) is a P-Channel MOSFET manufactured by Toshiba Semiconductor and Storage. It features a drain-source breakdown voltage (Vdss) of 20 V and a continuous drain current (Id) of 100 mA at 25 °C. The device utilizes the U-MOS VI technology platform and is housed in an SOT-563 surface-mount package. This component is designed for signal switching applications requiring low power consumption and compact form factors.
Verify the specific manufacturer designation as Toshiba Semiconductor and Storage when sourcing. Confirm the package type matches the required SOT-563 footprint for PCB layout compatibility. Ensure the part number suffix corresponds to the intended tape and reel configuration for automated assembly processes.
Select this component for designs requiring a 20 V P-Channel switch with 100 mA current handling. The SOT-563 package offers space efficiency for dense layouts. Consider the thermal dissipation limits inherent to small signal packages when determining circuit load requirements.
This part belongs to Toshiba's U-MOS VI series, which focuses on improving switching characteristics and reducing gate charge for modern portable electronics. The SSM6P16FE integrates P-Channel functionality within a standard dual-package outline, allowing designers to utilize available board space effectively while maintaining reliable switching performance.
The maximum drain-source breakdown voltage (Vdss) is rated at 20 V.
It utilizes Toshiba's U-MOS VI technology.
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