ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：MOSFET 2P-CH 20V 0.1A ES6
- Series：-
- Mfr：Toshiba Semiconductor and Storage
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 P-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：100mA
- Rds On (Max) @ Id, Vgs：8Ohm @ 50mA, 4V
- Vgs(th) (Max) @ Id：1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：-
- Input Capacitance (Ciss) (Max) @ Vds：12.2pF @ 3V
- Power - Max：150mW
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SOT-563, SOT-666
- Supplier Device Package：ES6
- Grade：-
- Qualification：-
Download product information
Overview
The SSM6P35FE(TE85L,F) is a dual P-channel MOSFET manufactured by Toshiba Semiconductor and Storage. It utilizes the U-MOS structure for low ON-resistance characteristics. The device features a drain-source breakdown voltage (V_DSS) of -20 V and a continuous drain current (I_D) of -0.25 A. The maximum drain-source on-resistance (R_DS(on)) is specified at 45 mΩ. It operates within an ambient temperature range of -55°C to +150°C and has a power dissipation rating of 150 mW. The component is housed in a compact USM-3 package.
Feature Summary
- Dual P-channel configuration integrated into a single compact surface-mount package.
- U-MOS structure provides low ON-resistance for efficient switching performance.
- Enhanced ruggedness with no current concentration and superior frequency characteristics.
Applications
- Cell phone power supply circuits
- Notebook PC power supply circuits
- Lithium-ion secondary battery protection circuits
Procurement Notes
Verify the specific ordering suffix TE85L,F against the manufacturer's official documentation to confirm packaging details such as reel size or tape specifications. Ensure that the requested quantity aligns with the standard factory packaging requirements defined in the product datasheet to avoid handling discrepancies during assembly.
Selection Notes
Select this component when a dual P-channel switch is required in space-constrained portable applications. The -20 V rating suits low-voltage logic interfaces, while the small USM-3 package minimizes board area. Confirm that the thermal management strategy accommodates the 150 mW power dissipation limit under expected operating conditions.
Part Context
This part belongs to Toshiba’s Small-Signal MOSFET (SSM) series, specifically designed for high-density mounting in portable electronics. The SSM line emphasizes low voltage drive capabilities and compact form factors, making it suitable for integration into mobile devices where space efficiency and switching speed are critical design parameters.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided source material. Verify pinout compatibility and electrical parameter tolerances before considering any alternative components from other manufacturers.
