SSM6P816R,LF

$0.63

Description：MOSFET 2P-CH 20V 6A 6TSOPF
Series：-

SKU:4634f14ec48d Category: FET, MOSFET Arrays Brand: Toshiba Semiconductor and Storage

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Product introduction

Product Detailed Parameters

Description：MOSFET 2P-CH 20V 6A 6TSOPF
Series：-
Mfr：Toshiba Semiconductor and Storage
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：2 P-Channel (Dual)
FET Feature：Logic Level Gate, 1.8V Drive
Drain to Source Voltage (Vdss)：20V
Current - Continuous Drain (Id) @ 25°C：6A (Ta)
Rds On (Max) @ Id, Vgs：30.1mOhm @ 4A, 4.5V
Vgs(th) (Max) @ Id：1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：16.6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds：1030pF @ 10V
Power - Max：1.4W (Ta)
Operating Temperature：150°C
Mounting Type：Surface Mount
Package / Case：6-SMD, Flat Leads
Supplier Device Package：6-TSOP-F
Grade：-
Qualification：-

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SSM6P816R,LF

Overview

The SSM6P816R,LF is a dual P-channel MOSFET array from Toshiba’s U-MOS VII series. It features a drain-source voltage of -20 V and a continuous drain current of -6 A. The on-resistance is specified at 0.0301 Ω when measured at a gate-source voltage of 4.5 V. The device operates within an ambient temperature range up to 150°C and has a maximum power dissipation of 1.4 W in free air. Key electrical characteristics include a maximum gate charge of 16.6 nC at 4.5 V and a maximum input capacitance of 1030 pF at 10 V.

Feature Summary

Dual P-channel configuration for compact circuit design
Low on-resistance for efficient power switching
High thermal stability with 150°C operating limit

Applications

Power management switches
Battery protection circuits
Load switching applications

Procurement Notes

Verify the component authenticity by checking the manufacturer's official documentation and authorized distributor channels. Ensure the part number matches the exact specification sheet provided by Toshiba Semiconductor and Storage. Confirm RoHS compliance status if required for specific regulatory standards. Cross-reference the marking code PP7 with official datasheets to validate the physical component identity before integration into production systems.

Selection Notes

Select this component for applications requiring dual P-channel switching with low voltage operation. The U-MOS VII technology offers optimized performance for power management tasks. Consider the 1.4 W power dissipation limit when designing thermal solutions. The TSOP6F package is suitable for surface mount assembly processes. Evaluate the gate charge requirements against the driving circuit capabilities to ensure proper switching speeds.

Part Context

This part belongs to Toshiba’s U-MOS VII series of MOSFETs, designed for power management applications. The series emphasizes low on-resistance and high reliability. The SSM6P816R,LF specifically provides a dual P-channel solution in a small surface-mount package. It is intended for use in portable devices and industrial equipment where space efficiency and power control are critical.