SST112 SOT-23 3L ROHS

$3.53

Description：JFET N-CH 35V SOT23-3
Series：SST112

SKU:a1dcf3b665db Category: JFETs Brand: Linear Integrated Systems, Inc.

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Product introduction

Product Detailed Parameters

Description：JFET N-CH 35V SOT23-3
Series：SST112
Mfr：Linear Integrated Systems, Inc.
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Voltage - Breakdown (V(BR)GSS)：35 V
Drain to Source Voltage (Vdss)：-
Current - Drain (Idss) @ Vds (Vgs=0)：-
Current Drain (Id) - Max：-
Voltage - Cutoff (VGS off) @ Id：-
Input Capacitance (Ciss) (Max) @ Vds：12pF @ 10V
Resistance - RDS(On)：50 Ohms
Power - Max：350 mW
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：TO-236-3, SC-59, SOT-23-3
Supplier Device Package：SOT-23-3
Grade：-
Qualification：-

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SST112 SOT-23 3L ROHS

Overview

The SST112 is a single N-channel Junction Field-Effect Transistor (JFET) switch manufactured by Linear Integrated Systems in the SOT-23 surface-mount package. It serves as a direct replacement for the Siliconix J/SST111 series. Key electrical characteristics include a gate-to-source cutoff voltage (VGS(off)) ranging from -1V to -5V, a drain-to-source saturation current (IDSS) of 2mA, and a typical on-resistance (rDS(on)) of 50Ω. The device features low gate leakage current of 5pA and fast switching capabilities with turn-on times around 2ns. It operates within a junction temperature range of -55°C to +150°C.

Feature Summary

Direct replacement compatibility with the Siliconix J/SST111 series
Ultra-low gate leakage current specification of 5pA
Fast switching performance with 4ns typical transition time
High power dissipation capability up to 350mW in SOT-23 packaging

Applications

Low-level analog signal switching
Sample-and-hold circuits
Chopper-stabilized amplifiers

Procurement Notes

Verify the specific VGS(off) bin (-1V to -5V) required for your circuit design, as this parameter varies significantly between devices in the same family. Confirm that the SOT-23 package dimensions match your PCB footprint. Ensure the operating conditions do not exceed the continuous power dissipation limits, particularly at elevated ambient temperatures where derating applies.

Selection Notes

Select the SST112 when a low on-resistance of 50Ω and moderate saturation current of 2mA are acceptable. Compare against the SST111 if lower resistance (30Ω) is needed, or the SST113 if higher resistance (100Ω) suits the application. Consider the input capacitance of 12pF for high-frequency signal integrity requirements. Verify that the -35V breakdown voltage meets the system's maximum voltage constraints.

Part Context

This component belongs to the J/SST111 series of single N-channel JFET switches produced by Linear Integrated Systems. The company utilizes proprietary processes originally developed at Amelco, Union Carbide, Intersil, and Micro Power Systems. The SST112 variant specifically targets applications requiring a balance between low on-resistance and manageable gate leakage, housed in the compact SOT-23 form factor alongside the TO-92 J-series equivalent.

Replacement Considerations

The datasheet explicitly identifies this part as a direct replacement for the Siliconix J/SST111 series. When substituting, ensure the replacement device matches the required VGS(off) range and rDS(on) specifications. Cross-reference pinouts carefully, as the SOT-23 pin configuration (Drain, Gate, Source) must align with the original design intent.