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The SST113 is an N-channel JFET switch in a SOT-23 package, serving as a direct replacement for the Siliconix J/SST111 series. It features a gate leakage current of 5pA and a typical turn-on time of 4ns. Static characteristics include a drain-source on-resistance of 100Ω, a gate-to-source cutoff voltage range of -3V to -5V, and a saturation current of 2mA. Dynamic parameters specify an input capacitance of 12pF, reverse transfer capacitance of 5pF, and equivalent noise voltage of 3nV/√Hz. Absolute maximum ratings allow for continuous power dissipation of 350mW and a junction operating temperature up to 150°C.
Verify that the ordering suffix corresponds to the specific SOT-23 package variant required for your design. Confirm RoHS compliance status matches project specifications. Ensure the manufacturer designation aligns with Linear Integrated Systems documentation rather than legacy Siliconix branding. Cross-reference the part number against the latest datasheet revision to confirm static and dynamic electrical characteristics have not changed.
Select this component when a low-noise, fast-switching N-channel JFET is required in a compact surface-mount form factor. The device offers a balance of low insertion loss and high performance suitable for precision analog signal paths. Consider the 100Ω on-resistance and 5pA gate leakage when designing bias networks. The SOT-23 package facilitates automated assembly for high-volume manufacturing environments.
This component belongs to the J/SST111 series of single N-channel JFET switches. The series includes variants such as the J/SST111 and J/SST112, which differ primarily in their on-resistance and cutoff voltage specifications. The SST113 specifically targets applications requiring lower on-resistance compared to the base model while maintaining the same low-noise profile and physical footprint.
The datasheet explicitly identifies this part as a direct replacement for the Siliconix J/SST111 series. Verify pinout compatibility between the TO-92 and SOT-23 packages if transitioning from through-hole designs.