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Product Detailed Parameters
- Description：JFET P-CH TO236
- Series：-
- Mfr：Vishay Dale
- Package：Tape & Reel (TR)
- FET Type：-
- Voltage - Breakdown (V(BR)GSS)：-
- Drain to Source Voltage (Vdss)：-
- Current - Drain (Idss) @ Vds (Vgs=0)：-
- Current Drain (Id) - Max：-
- Voltage - Cutoff (VGS off) @ Id：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- Resistance - RDS(On)：-
- Power - Max：-
- Operating Temperature：-
- Mounting Type：Surface Mount
- Package / Case：TO-236-3, SC-59, SOT-23-3
- Supplier Device Package：TO-236 (SOT-23)
- Grade：-
- Qualification：-
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Overview
The SST175-T1-E3 is a P-channel JFET manufactured by Vishay Dale, housed in a surface-mount SOT-23-3 package. It features a breakdown voltage of 30V and an on-state current of 7mA at a gate-source cutoff voltage of 1.5V with 1nA drain current. The device operates within a junction temperature range of -55°C to 150°C.
Feature Summary
- Surface-mount construction in a compact SOT-23-3 package for automated assembly
- P-channel JFET architecture providing reliable switching capabilities
- High junction temperature rating supporting operation up to 150°C
Applications
- General-purpose switching circuits
- Low-voltage signal processing applications
- Consumer electronics requiring compact semiconductor solutions
Procurement Notes
Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm the specific datasheet version matches design requirements. Check for obsolescence status as availability may be limited. Ensure storage conditions comply with moisture sensitivity levels prior to soldering. Validate pinout compatibility with existing PCB footprints during integration planning.
Selection Notes
Select this component when a small-form-factor P-channel JFET is required for low-voltage applications. The 30V breakdown voltage suits systems operating below this threshold. Consider the SOT-23-3 footprint constraints against available board space. Evaluate thermal management needs given the 150°C junction limit. Compare performance metrics against alternative JFETs if higher current or voltage ratings are necessary.
Part Context
This part belongs to the Vishay Dale discrete semiconductor portfolio, specifically focusing on junction field-effect transistors. The product line emphasizes reliability and compact packaging for modern electronic designs. Vishay Dale provides comprehensive technical documentation to support engineering integration and validation processes.
Replacement Considerations
Public confirmed substitute part numbers are not available in the provided data. Consult official Vishay resources for potential cross-references or updated series replacements.
