Jfets SST202 SOT-23 3L ROHS product image

SST202 SOT-23 3L ROHS

$4.33
  • Description:JFET N-CH 40V SOT23-3
  • Series:SST202

SKU:b17faa4eb50e Category: Brand:

  
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SST202 SOT-23 3L ROHS is listed in the Jfets range at ChipApex. The manufacturer field lists Linear Integrated Systems, Inc.. Its product description is JFET N-CH 40V SOT23-3. Review the specifications below when checking this part for your BOM.

Jfets specifications for SST202 SOT-23 3L ROHS

  • Description:JFET N-CH 40V SOT23-3
  • Series:SST202
  • Mfr:Linear Integrated Systems, Inc.
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • FET Type:N-Channel
  • Voltage - Breakdown (V(BR)GSS):40 V
  • Drain to Source Voltage (Vdss):-
  • Current - Drain (Idss) @ Vds (Vgs=0):900 µA @ 15 V
  • Current Drain (Id) - Max:-
  • Voltage - Cutoff (VGS off) @ Id:800 mV @ 10 nA
  • Input Capacitance (Ciss) (Max) @ Vds:4.5pF @ 15V
  • Resistance - RDS(On):-
  • Power - Max:350 mW
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package:SOT-23-3
  • Grade:-
  • Qualification:-

Jfets datasheet and documents for SST202 SOT-23 3L ROHS

SST202 SOT-23 3L ROHS

Jfets Overview

The SST202 is a single N-channel JFET amplifier in an SOT-23-3 package. It features a gate-to-source breakdown voltage of -40V and a drain-to-source saturation current range of 0.9mA to 4.5mA at VDS=15V. The device exhibits a forward transconductance of 1.0mS, input capacitance of 4.5pF, and noise voltage of 4.0nV/√Hz. Continuous power dissipation is rated at 350mW at +25°C, with an operating junction temperature range of -55°C to +150°C.

Jfets Feature Summary

  • High gain performance suitable for low-level signal amplification
  • Very low noise characteristics for sensitive applications
  • High input impedance with minimal leakage current
  • Low cutoff voltage enabling operation with low-voltage power supplies

Jfets Applications

  • High-gain, low-noise amplifiers
  • Low-current, low-voltage battery-powered amplifiers
  • Infrared detector amplifiers
  • Ultra-high input impedance pre-amplifiers

Jfets Procurement Notes

Verify the complete part number including the specific package suffix (SOT-23 3L) and RoHS compliance status when ordering. Confirm that the required electrical parameters, such as the specific VGS(off) range for the SST202 variant, align with the design specifications before finalizing procurement decisions.

Jfets Selection Notes

Select the SST202 over other variants like the SST201 or SST204 based on the required drain-to-source saturation current and gate-to-source cutoff voltage ranges. Ensure the application demands the specific high-gain and low-noise profile provided by this N-channel JFET configuration within the SOT-23 form factor.

Jfets Part Context

This component belongs to the J/SST201/2/4 series of high-gain, single N-channel JFET amplifiers. The SST series specifically denotes surface-mount capability in the TO-236 (SOT-23) package, serving as a direct replacement for legacy Siliconix devices while offering automated assembly compatibility through tape-and-reel packaging options.

Jfets Replacement Considerations

The datasheet identifies this series as a direct replacement for Siliconix J/SST201/2/4 series devices. Verify pinout compatibility and electrical parameter matching against original designs when substituting.

Jfets FAQ

What is the maximum gate-to-source breakdown voltage for the SST202?

The maximum gate-to-source breakdown voltage (BVGSS) is -40V.

What is the typical forward transconductance (gfs) for this device?

The typical forward transconductance is 1.0mS at VDS = 15V and VGS = 0.0V.

Does the SST202 support automated assembly?

Yes, the SST series is available in tape-and-reel packaging for automated assembly.

SST202 SOT-23 3L ROHSSST202 SOT-23 3L ROHS
$4.33
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