SST4416 SOT-23 3L ROHS

Overview

The SST4416 is an N-channel JFET in a SOT-23-3L package designed for high-frequency amplifier applications. It offers a typical forward transconductance of 7500 µS and a maximum power gain of 10 dB at 400 MHz. The device features a low noise figure of 4 dB at 400 MHz with a 1kΩ source resistance. Absolute maximum ratings include a gate-to-source breakdown voltage of -30V, continuous power dissipation of 300mW, and an operating junction temperature range from -55°C to +135°C.

Feature Summary

• Designed as a direct replacement for the SILICONIX 2N4416 and 2N4416A discrete semiconductors.
• Provides exceptional RF performance with a 10 dB power gain at 400 MHz.
• Maintains very low noise characteristics suitable for sensitive signal amplification.
• Utilizes a compact SOT-23 surface-mount package for space-constrained designs.

Applications

• High frequency amplifier circuits
• Low noise signal processing stages
• RF front-end modules

Procurement Notes

Verify that the specific ordering suffix matches the required pinout configuration, as the datasheet indicates variations between the standard SST series and the A variant regarding gate-to-source breakdown voltage limits. Confirm RoHS compliance status through official manufacturer documentation prior to integration into production assemblies.

Selection Notes

Select this component when a low-noise N-channel JFET is required for frequencies up to 400 MHz. Ensure the circuit design accommodates the -30V gate-to-source breakdown limit for the standard SST4416 variant. Consider the 300mW continuous power dissipation capability when designing thermal management solutions for the SOT-23 package.

Part Context

This part belongs to the 2N Series family of high-performance discrete semiconductors developed by Linear Integrated Systems. The company utilizes proprietary processes originally derived from Amelco and Intersil to manufacture these devices. The SST4416 serves as the surface-mount equivalent to the traditional TO-72 packaged 2N4416.

Replacement Considerations

Officially documented as a replacement for the SILICONIX 2N4416 and 2N4416A. Designers must account for the difference in gate-to-source breakdown voltage between the standard -30V rating and the -35V rating of the 'A' suffix variant.

FAQ

What is the maximum power gain at 400 MHz?

The maximum power gain is 10 dB at 400 MHz under conditions of VDS = 15V and ID = 5mA.

How does the gate-to-source breakdown voltage differ between variants?

The standard SST4416 has a maximum gate-to-source breakdown voltage of -30V, while the 2N4416A variant supports up to -35V.

What is the typical forward transconductance?

The typical forward transconductance (gfs) is 7500 µS at VDS = 15V and VGS = 0V.