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Product Detailed Parameters
- Description：JFET N-CH 30V SOT23
- Series：-
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Voltage - Breakdown (V(BR)GSS)：30 V
- Drain to Source Voltage (Vdss)：-
- Current - Drain (Idss) @ Vds (Vgs=0)：5 mA @ 15 V
- Current Drain (Id) - Max：-
- Voltage - Cutoff (VGS off) @ Id：3 V @ 1 nA
- Input Capacitance (Ciss) (Max) @ Vds：2.2pF @ 15V
- Resistance - RDS(On)：-
- Power - Max：350 mW
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-236-3, SC-59, SOT-23-3
- Supplier Device Package：SOT-23
- Grade：-
- Qualification：-
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Overview
The Vishay Siliconix SST4416-T1-E3 is an N-channel Junction Field-Effect Transistor (JFET) designed for high-frequency amplification. It utilizes a TO-236 (SOT-23) surface-mount package with tape-and-reel delivery. Key electrical parameters include a Gate-Source Breakdown Voltage of -30 V, a minimum Forward Transconductance of 4.5 mS, and a Saturation Drain Current of 5 mA. The device exhibits a typical power gain of 13 dB at 400 MHz and features very low noise characteristics.
Feature Summary
- Provides excellent high-frequency gain suitable for wideband applications
- Features very low noise performance for high system sensitivity
- Offers very low distortion for high-quality signal amplification
- Delivers high AC/DC switch off-isolation for switching capability
Applications
- High-frequency amplifier/mixer circuits
- Oscillator designs
- Sample-and-hold systems
- Very low capacitance switches
Procurement Notes
Verify the specific ordering suffix to confirm the tape-and-reel packaging format required for automated assembly processes. Ensure the component meets RoHS compliance standards as indicated by the E3 designation. Confirm that the TO-236 package dimensions align with the target PCB footprint design constraints before finalizing procurement orders.
Selection Notes
Select this JFET when high-frequency performance and low noise are critical requirements. The TO-236 package offers a cost-effective surface-mount solution compared to hermetically sealed alternatives. Evaluate the -30 V breakdown voltage limit against circuit operating conditions to ensure adequate safety margins during selection.
Part Context
This component belongs to the 2N4416 family of N-channel JFETs manufactured by Vishay Siliconix. While the 2N4416A variant supports a higher -35 V breakdown voltage, the SST4416 provides a standardized -30 V rating. The SST prefix specifically denotes the plastic SOT-23 package configuration intended for general-purpose commercial electronics rather than military-grade hermetic sealing.
Replacement Considerations
The 2N4416 serves as a direct functional equivalent within the same product family. Designers may also consider the 2N4416A if a higher gate-source breakdown voltage of -35 V is required for the application environment.
FAQ
What is the maximum Gate-Source Breakdown Voltage for the SST4416?
The minimum Gate-Source Breakdown Voltage is specified as -30 V.
Does the SST4416 support dual supply operation?
No, the datasheet specifies single-supply operation characteristics for this JFET component.
What is the typical power gain at 400 MHz?
The typical power gain is 13 dB at a frequency of 400 MHz.
