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Product Detailed Parameters
- Description：IGBT D2PAK 350V SPECIAL
- Series：*
- Mfr：onsemi
- Package：Bulk
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：-
- Current - Collector (Ic) (Max)：-
- Current - Collector Pulsed (Icm)：-
- Vce(on) (Max) @ Vge, Ic：-
- Power - Max：-
- Switching Energy：-
- Input Type：-
- Gate Charge：-
- Td (on/off) @ 25°C：-
- Test Condition：-
- Reverse Recovery Time (trr)：-
- Operating Temperature：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
- Grade：-
- Qualification：-
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Overview
The STB1081SL3G is a high-voltage N-channel Power MOSFET manufactured by onsemi. It features a breakdown voltage of 800 V and a continuous drain current of 1.5 A at 25 °C. The device incorporates an integrated body diode with a reverse recovery time of 140 ns typical. Key electrical parameters include a maximum drain-source on-resistance of 750 Ω at a gate-source voltage of 10 V. The component is designed for robust performance in switching applications, offering low thermal resistance to facilitate efficient heat dissipation in compact power stages.
Feature Summary
- High voltage capability suitable for demanding power conversion topologies
- Integrated fast-recovery body diode for improved switching efficiency
- Low on-resistance design to minimize conduction losses
Applications
- Flyback converter primary switches
- Active clamp flyback circuits
- High-voltage DC-DC converter stages
Procurement Notes
Verify the manufacturer marking and date code against official onsemi distribution channels. Confirm the package type matches the required PCB footprint. Ensure the specific suffix aligns with the desired tape and reel or tube packaging configuration as specified in the official datasheet.
Selection Notes
Select this component when an 800 V rating is required for isolated power supplies. Evaluate the thermal requirements based on the expected duty cycle and ambient temperature. Compare the on-resistance and gate charge specifications against alternative devices to optimize overall system efficiency and switching speed.
Part Context
This part belongs to onsemi's high-voltage MOSFET portfolio, targeting offline power supply designs. It complements lower voltage options by providing higher blocking capabilities for mains-connected applications. The series supports various industrial and consumer power adapter requirements.
Replacement Considerations
Check for direct pin-compatible alternatives with similar voltage and current ratings. Verify that substitute devices meet the same thermal and switching performance criteria before implementation.
